Electric-field control of spin accumulation signals in silicon at room temperature

Abstract

We demonstrate spin-accumulation signals controlled by the gate voltage in a metal-oxide-semiconductor field effect transistor structure with a Si channel and a CoFe/$n^{+}$-Si contact at room temperature. Under the application of a back-gate voltage, we clearly observe the three-terminal Hanle-effect signal, i.e., spin-accumulation signal. The magnitude of the spin-accumulation signals can be reduced with increasing the gate voltage. We consider that the gate controlled spin signals are attributed to the change in the carrier density in the Si channel beneath the CoFe/$n^{+}$-Si contact. This study is not only a technological jump for Si-based spintronic applications with gate structures but also reliable evidence for the spin injection into the semiconducting Si channel at room temperature.

4 pages, 3 figures

References in corpus (6)

• Electronic measurement and control of spin transport in Silicon
• Coherent spin transport through a 350-micron-thick Silicon wafer
• Electrical Detection of Spin Accumulation at a Ferromagnet-Semiconductor Interface
• Comment: "Electrical injection and detection of spin accumulation in silicon at 500 K with magnetic metal / silicon dioxide contacts" [Nature Commun. 2:245 doi:10.1038/ncomms125 (2011)]
• Bias-controlled sensitivity of ferromagnet/semiconductor electrical spin detectors
• Spin-Polarized Transient Electron Trapping in Phosphorus-doped Silicon

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• Investigation of spin scattering mechanism in silicon channels of Fe/MgO/Si lateral spin valves
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• Residual disorder and diffusion in thin Heusler alloy films
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