60 citations · 61 across the 2 of their papers we have counts for
2 papers
cond-mat.mtrl-sci2022★ 1 cited
Molecular beam homoepitaxy of N-polar AlN: enabling role of Al-assisted surface cleaning
Zexuan Zhang, Yusuke Hayashi, Tetsuya Tohei +7
N-polar aluminum nitride (AlN) is an important building block for next-generation high-power RF electronics. We report successful homoepitaxial growth of N-polar AlN by molecular b…
cond-mat.mes-hall2011★ 60 cited
Electric-field control of spin accumulation signals in silicon at room temperature
Y. Ando, Y. Maeda, K. Kasahara +8
We demonstrate spin-accumulation signals controlled by the gate voltage in a metal-oxide-semiconductor field effect transistor structure with a Si channel and a CoFe/-Si con…