Self-consistent model of spin accumulation magnetoresistance in ferromagnet-insulator-semiconductor tunnel junctions
arXiv:1408.1003 · doi:10.1103/PhysRevB.90.220402
Abstract
Spin accumulation in a paramagnetic semiconductor due to voltage-biased current tunneling from a polarized ferromagnet is experimentally manifest as a small additional spin-dependent resistance. We describe a rigorous model incorporating the necessary self-consistency between electrochemical potential splitting, spin-dependent injection current, and applied voltage that can be used to simulate this so-called "3T" signal as a function of temperature, doping, ferromagnet bulk spin polarization, tunnel barrier features and conduction nonlinearity, and junction voltage bias.
References in corpus (7)
- Electrical Detection of Spin Transport in Lateral Ferromagnet-Semiconductor Devices
- Electronic measurement and control of spin transport in Silicon
- Coherent spin transport through a 350-micron-thick Silicon wafer
- Electrical Detection of Spin Accumulation at a Ferromagnet-Semiconductor Interface
- Efficient Spin Injection into Silicon and the Role of the Schottky Barrier
- Inelastic electron tunneling spectroscopy of local "spin accumulation" devices
- Annealing-induced magnetic moments detected by spin precession measurements in epitaxial graphene on SiC