Self-consistent model of spin accumulation magnetoresistance in ferromagnet-insulator-semiconductor tunnel junctions

Abstract

Spin accumulation in a paramagnetic semiconductor due to voltage-biased current tunneling from a polarized ferromagnet is experimentally manifest as a small additional spin-dependent resistance. We describe a rigorous model incorporating the necessary self-consistency between electrochemical potential splitting, spin-dependent injection current, and applied voltage that can be used to simulate this so-called "3T" signal as a function of temperature, doping, ferromagnet bulk spin polarization, tunnel barrier features and conduction nonlinearity, and junction voltage bias.

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Cited by in corpus (4)

• Origin and evolution of surface spin current in topological insulators
• Observation of large spin accumulation voltages in non-degenerate Si spin devices due to spin drift effect: Experiments and theory
• All-electric spin device operation using the Weyl semimetal, WTe${}_2$, at room temperature
• Spincaloritronic signal generation in non-degenerate Si