All-electric spin device operation using the Weyl semimetal, WTe${}_2$, at room temperature

Abstract

Topological quantum materials (TQMs) possess abundant and attractive spin physics, and a Weyl semimetal is the representative material because of the generation of spin polarization that is available for spin devices due to fictitious Weyl monopoles at the edge of the Weyl node. Meanwhile, a Weyl semimetal allows the other but unexplored spin polarization due to local symmetry breaking. Here, we report all-electric spin device operation using a type-II Weyl semimetal, WTe${}_2$, at room temperature. The polarization of spins propagating in the all-electric device is perpendicular to the WTe${}_2$ plane, which is ascribed to local in-plane symmetry breaking in WTe${}_2$, yielding the spin polarization creation of propagating charged carriers, namely, the spin-polarized state creation from the non-polarized state. Systematic control experiments unequivocally negate unexpected artifacts, such as the anomalous Hall effect, the anisotropic magnetoresistance etc. Creation of all-electric spin devices made of TQMs and their operation at room temperature can pave a new pathway for novel spin devices made of TQMs resilient to thermal fluctuation.

20 pages, 4 figures

References in corpus (8)

• Titanic Magnetoresistance in WTe2
• Phase transition between the quantum spin Hall and insulator phases in 3D: emergence of a topological gapless phase
• Large Proximity-Induced Spin Lifetime Anisotropy in Transition Metal Dichalcogenide/Graphene Heterostructures
• Electrical detection of the spin polarization due to charge flow in the surface state of the topological insulator Bi_1.5 Sb_0.5 Te_1.7 Se_1.3
• Thickness dependence of spin-orbit torques generated by WTe2
• Experimental observation of anisotropic Adler-Bell-Jackiw anomaly in type-II Weyl semimetal WTe${}_{1.98}$ crystals at the quasi-classical regime
• Impurity-assisted tunneling magnetoresistance under weak magnetic field
• Self-consistent model of spin accumulation magnetoresistance in ferromagnet-insulator-semiconductor tunnel junctions

Cited by in corpus (3)

• Nonlinear spin and orbital Edelstein effect in WTe2
• A novel device for controlling the flow of information based on Weyl fermions and some interesting remarks regarding the electromagnetic interactions of high energy particles
• Potentiometric detection of spin polarization expected at the surface of FeTe0.6Se0.4 in the effective p-wave superconducting state