Electrical detection of the spin polarization due to charge flow in the surface state of the topological insulator Bi_1.5 Sb_0.5 Te_1.7 Se_1.3

Abstract

We detected the spin polarization due to charge flow in the spin non-degenerate surface state of a three dimensional topological insulator by means of an all-electrical method. The charge current in the bulk-insulating topological insulator Bi1.5Sb0.5Te1.7Se1.3 (BSTS) was injected/extracted through a ferromagnetic electrode made of Ni80Fe20, and an unusual current-direction-dependent magnetoresistance gives evidence for the appearance of spin polarization which leads to a spin-dependent resistance at the BSTS/Ni80Fe20 interface. In contrast, our control experiment on Bi2Se3 gave null result. These observations demonstrate the importance of the Fermi-level control for the electrical detection of the spin polarization in topological insulators.

13pages, 4 figures

References in corpus (5)

• Discovery (theoretical prediction and experimental observation) of a large-gap topological-insulator class with spin-polarized single-Dirac-cone on the surface
• A topological Dirac insulator in a quantum spin Hall phase : Experimental observation of first strong topological insulator
• First direct observation of Spin-textures in Topological Insulators : Spin-resolved ARPES as a probe of topological quantum spin Hall effect and Berry's phase
• Observation of Dirac Holes and Electrons in a Topological Insulator
• Direct Measurement of the Out-of-Plane Spin Texture in the Dirac Cone Surface State of a Topological Insulator

Cited by in corpus (22)

• Topological Semimetal Nanostructures: From Properties to Topotronics
• Measurement of spin pumping voltage separated from extrinsic microwave effects
• Spin Injection and Inverse Edelstein Effect in the Surface States of Topological Kondo Insulator SmB6
• Work function of bulk-insulating topological insulator Bi2-xSbxTe3-ySey
• Ferroic Berry Curvature Dipole in a Topological Crystalline Insulator at Room Temperature
• Band tilt induced nonlinear Nernst effect in topological insulators: An efficient generation of high-performance spin polarization
• All-electric spin device operation using the Weyl semimetal, WTe${}_2$, at room temperature
• Topological insulator spin transistor
• Metal-insulator transition and tunable Dirac-cone surface state in the topological insulator TlBi1-xSbxTe2 studied by angle-resolved photoemission
• Spin polarization gate device based on the chirality-induced spin selectivity and robust nonlocal spin polarization
• Bulk photospin effect: Calculation of electric spin susceptibility to second order in an electric field
• Room temperature nonlocal detection of charge-spin interconversion in a topological insulator
• Phase diagram and phonon-induced backscattering in topological insulator nanowires
• Charge-induced artifacts in non-local spin transport measurements: How to prevent spurious voltage signals
• Current-Induced Spin Accumulation and Magnetoresistance in Chiral Semimetals
• Nonlinear Edelstein Effect in Strongly Correlated Electron Systems
• Interplay between Topological States and Rashba States as Manifested on Surface Steps at Room Temperature
• Current-induced spin and orbital polarization in the ferroelectric Rashba semiconductor GeTe
• Correspondence: Reply to "On the understanding of current-induced spin polarization of 3D topological insulators"
• Reversible Modification of Rashba States in Topological Insulators at Room Temperature by Edge Functionalization
• Topological advantage for adsorbate chemisorption on conjugated chains
• Potentiometric detection of spin polarization expected at the surface of FeTe0.6Se0.4 in the effective p-wave superconducting state