Temperature evolution of spin accumulation detected electrically in a nondegenerated silicon channel

Abstract

We study temperature evolution of spin accumulation signals obtained by the three-terminal Hanle effect measurements in a nondegenerated silicon channel with a Schottky-tunnel-barrier contact. We find the clear difference in the temperature-dependent spin signals between spin-extraction and spin-injection conditions. In a spin-injection condition with a low bias current, the magnitude of spin signals can be enhanced despite the rise of temperature. For the interpretation of the temperature-dependent spin signals, it is important to consider the sensitivity of the spin detection at the Schottky-tunnel-barrier contact in addition to the spin diffusion in Si.

5 pages, 4 figures

References in corpus (8)

• Electrical Detection of Spin Transport in Lateral Ferromagnet-Semiconductor Devices
• Electronic measurement and control of spin transport in Silicon
• Coherent spin transport through a 350-micron-thick Silicon wafer
• Electrical Detection of Spin Accumulation at a Ferromagnet-Semiconductor Interface
• Semiconductors between spin-polarized source and drain
• Electric-field control of spin accumulation signals in silicon at room temperature
• Bias-controlled sensitivity of ferromagnet/semiconductor electrical spin detectors
• Theory of electrical spin-detection at a ferromagnet/semiconductor interface

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