Temperature dependence of spin diffusion length in silicon by Hanle-type spin precession

Abstract

The Hanle-type spin precession method was carried out associated with non-local magnetoresistance measurement using a highly doped (5\times10^19) silicon channel. The spin diffusion length obtained by the Hanle-method is in good agreement with that by the gap dependence of non-local signals. We have evaluated the interface and bulk channel effects separately, and it was demonstrated that the major source of temperature dependence of non-local signals originates from the spin polarization reduction at interface between the tunnel barrier and silicon.

12 pages, 4 figure, To appear in Applied Physics Letters.

References in corpus (5)

• Electronic measurement and control of spin transport in Silicon
• Coherent spin transport through a 350-micron-thick Silicon wafer
• Electrical injection and detection of spin-polarized electrons in silicon through an Fe_3Si/Si Schottky tunnel barrier
• Electrical Spin Injection into Silicon using MgO Tunnel Barrier
• Geometric dephasing-limited Hanle effect in long-distance lateral silicon spin transport devices

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