188 citations
Counting papers with at most 25 authors, so collaboration author lists do not stand in for the people here.
9 papers
Device-Free Localization Using Multi-Link MIMO Channels in Distributed Antenna Networks
Minseok Kim, Gesi Teng, Keita Nishi +2
Targeting integrated sensing and communication (ISAC) in future 6G radio access networks (RANs), this paper presents a novel device-free localization (DFL) framework based on distr…
Spin Drift in Highly Doped n-type Si
Makoto Kameno, Yuichiro Ando, Teruya Shinjo +5
A quantitative estimation of spin drift velocity in highly doped n-type silicon (Si) at 8 K is presented in this letter. A local two-terminal Hanle measurement enables the detectio…
Local magnetoresistance in Fe/MgO/Si lateral spin valve at room temperature
Tomoyuki Sasaki, Toshio Suzuki, Yuichiro Ando +4
Room temperature local magnetoresistance in two-terminal scheme is reported. By employing 1.6 nm-thick MgO tunnel barrier, spin injection efficiency is increased, resulting in larg…
An investigation of the inverted Hanle effect in highly-doped Si
Yasunori Aoki, Makoto Kameno, Yuichiro Ando +7
The underlying physics of the inverted Hanle effect appearing in Si was experimentally investigated using a Si spin valve, where spin transport was realized up to room temperature.…
The effect of spin drift on spin accumulation voltages in highly-doped Si
Makoto Kameno, Eiji Shikoh, Teruya Shinjo +5
An investigation was carried out into the effect of spin drift on spin accumulation signals in highly-doped Si using non-local 4-terminal (NL-4T) and 3-terminal (NL-3T) methods. Th…
Observation of weak temperature dependence of spin diffusion length in highly-doped Si by using a non-local 3-terminal method
M. Kameno, E. Shikoh, T. Oikawa +4
We conduct an experimental investigation of temperature dependence of spin diffusion length in highly-doped n-type silicon by using a non-local 3-terminal method. Whereas an effect…
Room-Temperature Electron Spin Transport in a Highly Doped Si Channel
Toshio Suzuki, Tomoyuki Sasaki, Tohru Oikawa +2
We report on the first demonstration of generating a spin current and spin transport in a highly doped Si channel at room temperature (RT) using a four-terminal lateral device with…
Temperature dependence of spin diffusion length in silicon by Hanle-type spin precession
T. Sasaki, T. Oikawa, T. Suzuki +3
The Hanle-type spin precession method was carried out associated with non-local magnetoresistance measurement using a highly doped (5\times10^19) silicon channel. The spin diffusio…
Electrical Spin Injection into Silicon using MgO Tunnel Barrier
Tomoyuki Sasaki, Tohru Oikawa, Toshio Suzuki +3
We observed spin injection into silicon through Fe/MgO tunnel barrier by using non-local magnetoresistance measurement technique. Fe/MgO tunnel barrier contacts with a lateral spin…