188 citations · 458 across the 8 of their papers we have counts for
8 papers
Spin Drift in Highly Doped n-type Si
Makoto Kameno, Yuichiro Ando, Teruya Shinjo +5
A quantitative estimation of spin drift velocity in highly doped n-type silicon (Si) at 8 K is presented in this letter. A local two-terminal Hanle measurement enables the detectio…
Local magnetoresistance in Fe/MgO/Si lateral spin valve at room temperature
Tomoyuki Sasaki, Toshio Suzuki, Yuichiro Ando +4
Room temperature local magnetoresistance in two-terminal scheme is reported. By employing 1.6 nm-thick MgO tunnel barrier, spin injection efficiency is increased, resulting in larg…
An investigation of the inverted Hanle effect in highly-doped Si
Yasunori Aoki, Makoto Kameno, Yuichiro Ando +7
The underlying physics of the inverted Hanle effect appearing in Si was experimentally investigated using a Si spin valve, where spin transport was realized up to room temperature.…
The effect of spin drift on spin accumulation voltages in highly-doped Si
Makoto Kameno, Eiji Shikoh, Teruya Shinjo +5
An investigation was carried out into the effect of spin drift on spin accumulation signals in highly-doped Si using non-local 4-terminal (NL-4T) and 3-terminal (NL-3T) methods. Th…
Observation of weak temperature dependence of spin diffusion length in highly-doped Si by using a non-local 3-terminal method
M. Kameno, E. Shikoh, T. Oikawa +4
We conduct an experimental investigation of temperature dependence of spin diffusion length in highly-doped n-type silicon by using a non-local 3-terminal method. Whereas an effect…
Room-Temperature Electron Spin Transport in a Highly Doped Si Channel
Toshio Suzuki, Tomoyuki Sasaki, Tohru Oikawa +2
We report on the first demonstration of generating a spin current and spin transport in a highly doped Si channel at room temperature (RT) using a four-terminal lateral device with…