188 citations
19 papers
Reduction of back switching by large damping ferromagnetic material
Tomohiro Taniguchi, Yohei Shiokawa, Tomoyuki Sasaki
Recent studies on magnetization dynamics induced by spin-orbit torque have revealed a weak dependence of the critical current for magnetization switching on the damping constant of…
Dependency of high-speed write properties on external magnetic field in spin-orbit torque in-plane magnetoresistance devices
Yohei Shiokawa, Eiji Komura, Yugo Ishitani +5
Spin-orbit torque (SOT) magnetoresistance (MR) devices have attracted attention for use in next-generation MR devices. The SOT devices are known to exhibit different write properti…
Over 1% magnetoresistance ratio at room temperature in non-degenerate silicon-based lateral spin valves
H. Koike, S. Lee, R. Ohshima +7
To augment the magnetoresistance (MR) ratio of n-type non-degenerate Si-based lateral spin valves (Si-LSVs), we modify the doping profile in the Si layer and introduce a larger loc…
Investigation of gating effect in Si spin MOSFET
Soobeom Lee, Fabien Rortais, Ryo Ohshima +6
A gate voltage application in a Si-based spin metal-oxide-semiconductor field-effect transistor (spin MOSFET) modulates spin accumulation voltages, where both electrical conductivi…
Gate-tunable spin exclusive or operation in a silicon-based spin device at room temperature
R. Ishihara, Y. Ando, S. Lee +5
Room temperature operation of a spin exclusive or (XOR) gate was demonstrated in lateral spin valve devices with nondegenerate silicon (Si) channels. The spin XOR gate is a fundame…
Quantitative and systematic analysis of bias dependence of spin accumulation voltage in a non-degenerate Si spin valve
Soobeom Lee, Fabien Rortais, Ryo Ohshima +5
Spin accumulation voltages in a non-degenerate Si spin valve are discussed quantitatively as a function of electric bias current using systematic experiments and model calculations…