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20142020
most citedOver 1% magnetoresistance ratio at room temperature in non-degenerate silicon-based lateral spin valves

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cond-mat.mtrl-sci2014

Spin transport in non-degenerate Si with a spin MOSFET structure at room temperature

Tomoyuki Sasaki, Yuichiro Ando, Makoto Kameno +5

Spin transport in non-degenerate semiconductors is expected to pave a way to the creation of spin transistors, spin logic devices and reconfigurable logic circuits, because room te…