56 citations · 183 across the 10 of their papers we have counts for
11 papers
Over 1% magnetoresistance ratio at room temperature in non-degenerate silicon-based lateral spin valves
H. Koike, S. Lee, R. Ohshima +7
To augment the magnetoresistance (MR) ratio of n-type non-degenerate Si-based lateral spin valves (Si-LSVs), we modify the doping profile in the Si layer and introduce a larger loc…
Investigation of gating effect in Si spin MOSFET
Soobeom Lee, Fabien Rortais, Ryo Ohshima +6
A gate voltage application in a Si-based spin metal-oxide-semiconductor field-effect transistor (spin MOSFET) modulates spin accumulation voltages, where both electrical conductivi…
Gate-tunable spin exclusive or operation in a silicon-based spin device at room temperature
R. Ishihara, Y. Ando, S. Lee +5
Room temperature operation of a spin exclusive or (XOR) gate was demonstrated in lateral spin valve devices with nondegenerate silicon (Si) channels. The spin XOR gate is a fundame…
Quantitative and systematic analysis of bias dependence of spin accumulation voltage in a non-degenerate Si spin valve
Soobeom Lee, Fabien Rortais, Ryo Ohshima +5
Spin accumulation voltages in a non-degenerate Si spin valve are discussed quantitatively as a function of electric bias current using systematic experiments and model calculations…
Spincaloritronic signal generation in non-degenerate Si
Naoto Yamashita, Yuichiro Ando, Hayato Koike +3
Spincaloritronic signal generation due to thermal spin injection and spin transport is demonstrated in a non-degenerate Si spin valve. The spin-dependent Seebeck effect is used for…
Investigation of spin scattering mechanism in silicon channels of Fe/MgO/Si lateral spin valves
Soobeom Lee, Naoto Yamashita, Yuichiro Ando +4
The temperature evolution of spin relaxation time, τsf, in degenerate silicon (Si)-based lateral spin valves is investigated by means of the Hanle effect measurements. τsf at 300 K…
Observation of large spin accumulation voltages in non-degenerate Si spin devices due to spin drift effect: Experiments and theory
Takayuki Tahara, Yuichiro Ando, Makoto Kameno +7
A large spin-accumulation voltage of more than 1.5 mV at 1 mA, i.e., a magnetoresistance of 1.5 Ω, was measured by means of the local three-terminal magnetoresistance in nondegener…
Room-temperature operation of Si spin MOSFET with high on/off spin signal ratio
Takayuki Tahara, Hayato Koike, Makoto Kameno +5
We experimentally demonstrate a Si spin metal-oxide-semiconductor field-effect transistor (MOSFET) that exhibits a high on/off ratio of source-drain current and spin signals at roo…
Spin transport in non-degenerate Si with a spin MOSFET structure at room temperature
Tomoyuki Sasaki, Yuichiro Ando, Makoto Kameno +5
Spin transport in non-degenerate semiconductors is expected to pave a way to the creation of spin transistors, spin logic devices and reconfigurable logic circuits, because room te…
Spin Drift in Highly Doped n-type Si
Makoto Kameno, Yuichiro Ando, Teruya Shinjo +5
A quantitative estimation of spin drift velocity in highly doped n-type silicon (Si) at 8 K is presented in this letter. A local two-terminal Hanle measurement enables the detectio…
Local magnetoresistance in Fe/MgO/Si lateral spin valve at room temperature
Tomoyuki Sasaki, Toshio Suzuki, Yuichiro Ando +4
Room temperature local magnetoresistance in two-terminal scheme is reported. By employing 1.6 nm-thick MgO tunnel barrier, spin injection efficiency is increased, resulting in larg…