Observation of large spin accumulation voltages in non-degenerate Si spin devices due to spin drift effect: Experiments and theory

Takayuki Tahara, Yuichiro Ando, Makoto Kameno +7

A large spin-accumulation voltage of more than 1.5 mV at 1 mA, i.e., a magnetoresistance of 1.5 Ω, was measured by means of the local three-terminal magnetoresistance in nondegener…