Local magnetoresistance in Fe/MgO/Si lateral spin valve at room temperature

Abstract

Room temperature local magnetoresistance in two-terminal scheme is reported. By employing 1.6 nm-thick MgO tunnel barrier, spin injection efficiency is increased, resulting in large non-local magnetoresistance. The magnitude of the non-local magnetoresistance is estimated to be 0.0057 ohm at room temperature. As a result, a clear rectangle signal is observed in local magnetoresistance measurement even at room temperature. We also investigate the origin of local magnetoresistance by measuring the spin accumulation voltage of each contact separately.

arXiv comment16pages, 3figures

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• Observation of large spin accumulation voltages in non-degenerate Si spin devices due to spin drift effect: Experiments and theory
• Spin transport in Si-based spin metal-oxide-semiconductor field-effect transistors: Spin drift effect in the inversion channel and spin relaxation in the n+-Si source/drain regions
• Nonmonotonic bias dependence of local spin accumulation signals in ferromagnet/semiconductor lateral spin-valve devices
• Over 1% magnetoresistance ratio at room temperature in non-degenerate silicon-based lateral spin valves
• Quantitative and systematic analysis of bias dependence of spin accumulation voltage in a non-degenerate Si spin valve
• Evidence of Pure Spin-Current Generated by Spin Pumping in Interface Localized States in Hybrid Metal-Silicon-Metal Vertical Structures
• Investigation of spin scattering mechanism in silicon channels of Fe/MgO/Si lateral spin valves
• Investigation of gating effect in Si spin MOSFET
• Giant tunnel magnetoresistance with a single magnetic phase-transition electrode
• Spincaloritronic signal generation in non-degenerate Si
• On the origin of the giant spin detection efficiency in tunnel barrier based electrical spin detector
• Spin transport in non-degenerate Si with a spin MOSFET structure at room temperature