Evidence of Pure Spin-Current Generated by Spin Pumping in Interface Localized States in Hybrid Metal-Silicon-Metal Vertical Structures
arXiv:1902.03652 · doi:10.1021/acs.nanolett.8b03386
Abstract
Due to the difficulty to grow high quality semiconductors on ferromagnetic metals, the study of spin diffusion transport in Si was only limited to lateral geometry devices. In this work, by using ultra-high vacuum wafer-bonding technique, we have successfully fabricated metal semiconductor metal CoFeB/MgO/Si/Pt vertical structures. We hereby demonstrate pure spin-current injection and transport in the perpendicular current flow geometry over a distance larger than 2μm in n-type Si at room temperature. In those experiments, a pure propagating spin-current is generated via ferromagnetic resonance spin-pumping and converted into a measurable voltage by using the inverse spin-Hall effect occurring in the top Pt layer. A systematic study by varying both Si and MgO thicknesses reveals the important role played by the localized states at the MgO/Si interface for the spin-current generation. Proximity effects involving indirect exchange interactions between the ferromagnet and the MgO/Si interface states appears to be a prerequisite to establish the necessary out-of-equilibrium spin-population in Si under the spin-pumping action.
References in corpus (30)
- Spin Transfer Torque Generated by the Topological Insulator Bi_2Se_3
- Nonlocal magnetization dynamics in ferromagnetic heterostructures
- Electronic measurement and control of spin transport in Silicon
- Spin Pumping and Inverse Spin Hall Effect in Platinum: The Essential Role of Spin-Memory Loss at Metallic Interfaces
- Scaling of spin Hall angle in 3d, 4d and 5d metals from Y3Fe5O12/metal spin pumping
- Highly efficient and tuneable spin-to-charge conversion through Rashba coupling at oxide interfaces
- Observation of the inverse spin Hall effect in silicon
- Electrical Detection of Magnetization Dynamics via Spin Rectification Effects
- Enhancement of the Spin Accumulation at the Interface Between a Spin-Polarized Tunnel Junction and a Semiconductor
- A Universal Method for Separating Spin Pumping from Spin Rectification Voltage of Ferromagnetic Resonance
- Theory of the spin relaxation of conduction electrons in silicon
- Room Temperature Giant Charge-to-Spin Conversion at SrTiO3/LaAlO3 Oxide Interface
- Rashba spin-orbit coupling and spin relaxation in silicon quantum wells
- An experimental demonstration of room-temperature spin transport in n-type Germanium epilayers
- Measurement of spin pumping voltage separated from extrinsic microwave effects
- Probing the Spin Pumping Mechanism: Exchange Coupling with Exponential Decay in Y3Fe5O12/barrier/Pt Heterostructures
- Temperature dependence of spin diffusion length in silicon by Hanle-type spin precession
- Lack of correlation between the spin mixing conductance and the ISHE-generated voltages in CoFeB/Pt,Ta bilayers
- Giant spin accumulation in silicon nonlocal spin-transport devices
- Local magnetoresistance in Fe/MgO/Si lateral spin valve at room temperature
- Modeling spin transport in electrostatically-gated lateral-channel silicon devices: role of interfacial spin relaxation
- Spin-pumping through a varying-thickness MgO interlayer in Fe/Pt system
- Non-ohmic spin transport in n-type doped silicon
- Spin-Polarized Transient Electron Trapping in Phosphorus-doped Silicon
- Reverse Schottky-Asymmetry Spin Current Detectors
- Rashba semiconductor as spin Hall material: Experimental demonstration of spin pumping in wurtzite -GaN:Si
- Green's function representation of spin pumping effect
- Exchange-driven spin relaxation in ferromagnet/oxide/semiconductor heterostructures
- Theory of spin-coherent transport through a defect spin state in a metal/ferromagnet tunnel junction during ferromagnetic resonance
- A microscopic formulation of dynamical spin injection in ferromagnetic-nonmagnetic heterostructures
Cited by in corpus (5)
- Ultrafast spin-currents and charge conversion at 3d-5d interfaces probed by time-domain terahertz spectroscopy
- Large spin-to-charge conversion at the two-dimensional interface of transition metal dichalcogenides and permalloy
- Spin to charge conversion at Rashba-split SrTiO interfaces from resonant tunneling
- Spin-current mediated exchange coupling in MgO-based magnetic tunnel junctions
- Large perpendicular magnetic anisotropy in Ta/CoFeB/MgO on full coverage monolayer MoS2 and first principle study of its electronic structure