Rashba semiconductor as spin Hall material: Experimental demonstration of spin pumping in wurtzite $n$-GaN:Si

Abstract

Pure spin currents in semiconductors are essential for implementation in the next generation of spintronic elements. Heterostructures of III- nitride semiconductors are currently employed as central building-blocks for lighting and high-power devices. Moreover, the long relaxation times and the spin-orbit coupling (SOC) in these materials indicate them as privileged hosts for spin currents and related phenomena. Spin pumping is an efficient mechanism for the inception of spin current and its conversion into charge current in non-magnetic metals and semiconductors with Rashba SOC $via$ spin Hall effects. We report on the generation in $n$-GaN:Si\,--\,at room temperature and through spin pumping\,--\,of pure spin current, fundamental for the understanding of the spin dynamics in these non-centrosymmetric Rashba systems. We find for $n$-GaN:Si a spin Hall angle ${\theta }_{\mathrm{SH}}$=$3.03\times 10^{-3}$, exceeding by one order of magnitude those reported for other semiconductors, pointing at III-nitrides as particularly efficient spin current generators.

10 pages, 4 figures

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• Dissipationless Quantum Spin Current at Room Temperature
• Long distance transport of magnon spin information in a magnetic insulator at room temperature
• Role of transparency of platinum-ferromagnet interface in determining intrinsic magnitude of spin Hall effect
• Spin pumping and spin-transfer torques in antiferromagnets
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• An experimental demonstration of room-temperature spin transport in n-type Germanium epilayers
• Paramagnetic spin pumping
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• Eddy current interactions in a Ferromagnet-Normal metal bilayer structure, and its impact on ferromagnetic resonance lineshapes
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• Vector spectroscopy for spin pumping

Cited by in corpus (5)

• Cross-plane thermal conductivity of GaN/AlN superlattices
• In situ compensation method for high-precision and high-sensitivity integral magnetometry
• Evidence of Pure Spin-Current Generated by Spin Pumping in Interface Localized States in Hybrid Metal-Silicon-Metal Vertical Structures
• Electrical characteristics of vertical-geometry Schottky junction to magnetic insulator (Ga,Mn)N heteroepitaxially grown on sapphire
• Impact of spin torques and spin pumping phenomena on magnon-plasmon polaritons in antiferromagnetic insulator-semiconductor heterostructures