Dynamical Spin Injection into p-type Germanium at Room Temperature

Abstract

We demonstrate dynamical spin injection into p-type germanium (Ge) at room temperature (RT) using spin pumping. The generated pure spin current is converted to a charge current by the inverse spin-Hall effect (ISHE) arising in the p-type Ge sample. A clear electromotive force due to the ISHE is detected at RT. The spin-Hall angle for p-type Ge is estimated to be θSHE = 2.6x10-3 at RT, which is much larger than that for p-type Si.

14 Pages, 3 Figures, 1 Table (To appear in Applied Physics Express)

References in corpus (1)

• Intrinsic Spin Lifetime of Conduction Electrons in Germanium

Cited by in corpus (10)

• Self-induced inverse spin Hall effect in permalloy at room temperature
• Spin Pumping and Inverse Spin Hall Effect in Germanium
• Gate-tunable spin-charge conversion and a role of spin-orbit interaction in graphene
• Large enhancement in the generation efficiency of pure spin currents in Ge using Heusler-compound Co_2FeSi electrodes
• Giant enhancement of spin pumping efficiency using Fe3Si ferromagnet
• Temperature Dependence of Spin Hall Angle of Palladium
• Rashba semiconductor as spin Hall material: Experimental demonstration of spin pumping in wurtzite $n$-GaN:Si
• Spin-wave-induced lateral temperature gradient in a YIG thin film/GGG system excited in an ESR cavity
• Inplane spin orbit torque magnetization switching and its detection using the spin rectification effect at sub-GHz frequencies
• Spin transport properties in a naphthyl diamine derivative film investigated by the spin pumping