Spin Accumulation in Nondegenerate and Heavily Doped p-Type Germanium

Abstract

Spin accumulation induced in p-type germanium from Fe/MgO tunnel contacts is studied as a function of hole concentration p (10^16 - 10^19 cm-3). For all p, the contacts are free of rectification and Schottky barrier, guaranteeing spin injection into the Ge and preventing spin accumulation enhancement by two-step tunneling via interface states. The observed spin accumulation is smallest for nondegenerate doping (p ~ 10^16 cm-3) and increases for heavily doped Ge. This trend is opposite to what is expected from spin injection and diffusion theory. For heavily doped Ge, the observed spin accumulation is orders of magnitude larger than predicted.

To appear in Appl. Phys. Express

References in corpus (8)

• Electrical Detection of Spin Accumulation at a Ferromagnet-Semiconductor Interface
• Electrical spin injection and transport in Germanium
• Semiconductors between spin-polarized source and drain
• Electrical spin injection and accumulation in CoFe/MgO/Ge contacts at room temperature
• Spin accumulation created electrically in an n-type germanium channel using Schottky tunnel contacts
• Electrical spin injection and detection in Germanium using three terminal geometry
• Electric-field control of spin accumulation signals in silicon at room temperature
• Electrical injection and detection of spin accumulation in Ge at room temperature

Cited by in corpus (8)

• Intrinsic Spin Lifetime of Conduction Electrons in Germanium
• Injection and detection of spin in a semiconductor by tunneling via interface states
• Dynamical Spin Injection into p-type Germanium at Room Temperature
• Ultrafast Probes of Nonequilibrium Hole Spin Relaxation in Ferromagnetic Semiconductor GaMnAs
• Spin and charge transport in material with spin-dependent conductivity
• Giant enhancement of spin detection sensitivity in (Ga,Mn)As/GaAs Esaki diodes
• Non-linear spin transport in a rectifying ferromagnet/semiconductor Schottky contact
• Bias current dependence of the spin lifetime in insulating Al${}_{0.3}$Ga${}_{0.7}$As