Non-linear spin transport in a rectifying ferromagnet/semiconductor Schottky contact
arXiv:1410.3994 · doi:10.1103/PhysRevB.92.075304
Abstract
The electrical creation and detection of spin accumulation in ferromagnet/semiconductor Schottky contacts that exhibit highly non-linear and rectifying electrical transport is evaluated. If the spin accumulation in the semiconductor is small, the expression for the spin voltage is identical to that of linear transport. However, if the spin accumulation is comparable to the characteristic energy scale that governs the degree of non-linearity, the spin detection sensitivity and the spin voltage are notably reduced. Moreover, the non-linearity enhances the back-flow of spins into the ferromagnet and its detrimental effect on the injected spin current, and the contact resistance required to avoid back-flow is larger than for linear transport. It is also shown that by virtue of the non-linearity, a non-magnetic metal contact can be used to electrically detect spin accumulation in a semiconductor.
Added appendix with general considerations about changes of the spin-detection sensitivity due to non-linearity; updated reference 51 to the related experimental manuscript by Spiesser et al. Phys. Rev. B 90, 205213 (2014) [and ArXiv:1410.4277]
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