Bias current dependence of spin accumulation signals in a silicon channel detected by a Schottky tunnel contact

Abstract

We study the electrical detection of spin accumulation at a ferromagnet-silicon interface, which can be verified by measuring a Hanle effect in three-terminal lateral devices. The device structures used consist of a semiconducting Si channel and a high-quality Schottky tunnel contact. In a low current-bias region, the Hanle-effect curves are observed only under forward bias conditions. This can be considered that the electrical detectability of the forward-biased contact is higher than that of the reverse-biased contact. This is possible evidence for the detection of spin-polarized electrons created in a Si channel.

4 pages, 3 figures

References in corpus (3)

• Electrical Detection of Spin Transport in Lateral Ferromagnet-Semiconductor Devices
• Electronic measurement and control of spin transport in Silicon
• Electrical Detection of Spin Accumulation at a Ferromagnet-Semiconductor Interface

Cited by in corpus (19)

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• Spin Drift in Highly Doped n-type Si
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• Pure spin current transport in a SiGe alloy
• Suppressing spin relaxation in silicon
• Effect of spin relaxation rate on the interfacial spin depolarization in ferromagnet/oxide/semiconductor contacts
• Non-linear spin transport in a rectifying ferromagnet/semiconductor Schottky contact
• Effect of the magnetic domain structure in the ferromagnetic contact on spin accumulation in silicon
• Bias current dependence of the spin lifetime in insulating Al${}_{0.3}$Ga${}_{0.7}$As