119 citations · 460 across the 10 of their papers we have counts for
10 papers
Exchange-driven magnetoresistance in silicon facilitated by electrical spin injection
Yuichiro Ando, Lan Qing, Yang Song +6
We use electrical spin injection to probe exchange interactions in phosphorus doped silicon (Si:P). The detection is enabled by a magnetoresistance effect that demonstrates the eff…
Large enhancement in the generation efficiency of pure spin currents in Ge using Heusler-compound Co_2FeSi electrodes
K. Kasahara, Y. Fujita, S. Yamada +3
We show nonlocal spin transport in n-Ge based lateral spin-valve devices with highly ordered Co_2FeSi/n^+-Ge Schottky tunnel contacts. Clear spin-valve signals and Hanle-effect cur…
Effect of the magnetic domain structure in the ferromagnetic contact on spin accumulation in silicon
Y. Ando, S. Yamada, K. Kasahara +3
We show a marked effect of the magnetic domain structure in an epitaxial CoFe contact on the spin accumulation signals in Si detected by three-terminal Hanle-effect measurements. C…
Evidence for the Presence of Spin Accumulation in Localized States at Ferromagnet-Silicon Interfaces
Y. Ando, S. Yamada, K. Kasahara +4
We experimentally show evidence for the presence of spin accumulation in localized states at ferromagnet-silicon interfaces, detected by electrical Hanle effect measurements in CoF…
Temperature evolution of spin accumulation detected electrically in a nondegenerated silicon channel
Y. Ando, K. Kasahara, S. Yamada +6
We study temperature evolution of spin accumulation signals obtained by the three-terminal Hanle effect measurements in a nondegenerated silicon channel with a Schottky-tunnel-barr…
Electric-field control of spin accumulation signals in silicon at room temperature
Y. Ando, Y. Maeda, K. Kasahara +8
We demonstrate spin-accumulation signals controlled by the gate voltage in a metal-oxide-semiconductor field effect transistor structure with a Si channel and a CoFe/-Si con…
Mechanism of Fermi Level Pinning at Metal/Germanium Interfaces
K. Kasahara, S. Yamada, K. Sawano +2
The physical origin of Fermi level pinning (FLP) at metal/Ge interfaces has been argued over a long period. Using the FeSi/Ge(111) heterostructure developed originally, we ca…
Spin accumulation created electrically in an n-type germanium channel using Schottky tunnel contacts
K. Kasahara, Y. Baba, K. Yamane +6
Using high-quality FeSi/-Ge Schottky-tunnel-barrier contacts, we study spin accumulation in an -type germanium (-Ge) channel. In the three- or two-terminal volta…
Bias current dependence of spin accumulation signals in a silicon channel detected by a Schottky tunnel contact
Y. Ando, K. Kasahara, K. Yamane +6
We study the electrical detection of spin accumulation at a ferromagnet-silicon interface, which can be verified by measuring a Hanle effect in three-terminal lateral devices. The…
Electrical injection and detection of spin-polarized electrons in silicon through an Fe_3Si/Si Schottky tunnel barrier
Y. Ando, K. Hamaya, K. Kasahara +5
We demonstrate electrical injection and detection of spin-polarized electrons in silicon (Si) using epitaxially grown Fe_3Si/Si Schottky-tunnel-barrier contacts. By an insertion of…