119 citations · 460 across the 10 of their papers we have counts for
6 papers · 1 filter
Exchange-driven magnetoresistance in silicon facilitated by electrical spin injection
Yuichiro Ando, Lan Qing, Yang Song +6
We use electrical spin injection to probe exchange interactions in phosphorus doped silicon (Si:P). The detection is enabled by a magnetoresistance effect that demonstrates the eff…
Large enhancement in the generation efficiency of pure spin currents in Ge using Heusler-compound Co_2FeSi electrodes
K. Kasahara, Y. Fujita, S. Yamada +3
We show nonlocal spin transport in n-Ge based lateral spin-valve devices with highly ordered Co_2FeSi/n^+-Ge Schottky tunnel contacts. Clear spin-valve signals and Hanle-effect cur…
Effect of the magnetic domain structure in the ferromagnetic contact on spin accumulation in silicon
Y. Ando, S. Yamada, K. Kasahara +3
We show a marked effect of the magnetic domain structure in an epitaxial CoFe contact on the spin accumulation signals in Si detected by three-terminal Hanle-effect measurements. C…
Evidence for the Presence of Spin Accumulation in Localized States at Ferromagnet-Silicon Interfaces
Y. Ando, S. Yamada, K. Kasahara +4
We experimentally show evidence for the presence of spin accumulation in localized states at ferromagnet-silicon interfaces, detected by electrical Hanle effect measurements in CoF…
Spin accumulation created electrically in an n-type germanium channel using Schottky tunnel contacts
K. Kasahara, Y. Baba, K. Yamane +6
Using high-quality FeSi/-Ge Schottky-tunnel-barrier contacts, we study spin accumulation in an -type germanium (-Ge) channel. In the three- or two-terminal volta…
Bias current dependence of spin accumulation signals in a silicon channel detected by a Schottky tunnel contact
Y. Ando, K. Kasahara, K. Yamane +6
We study the electrical detection of spin accumulation at a ferromagnet-silicon interface, which can be verified by measuring a Hanle effect in three-terminal lateral devices. The…