Electrical injection and detection of spin-polarized electrons in silicon through an Fe_3Si/Si Schottky tunnel barrier

Abstract

We demonstrate electrical injection and detection of spin-polarized electrons in silicon (Si) using epitaxially grown Fe_3Si/Si Schottky-tunnel-barrier contacts. By an insertion of a delta-doped n^+-Si layer (~ 10^19 cm^-3) near the interface between a ferromagnetic Fe_3Si/Si contact and a Si channel (~ 10^15 cm^-3), we achieve a marked enhancement in the tunnel conductance for reverse-bias characteristics of the Fe_3Si/Si Schottky diodes. Using laterally fabricated four-probe geometries with the modified Fe_3Si/Si contacts, we detect nonlocal output signals which originate from the spin accumulation in a Si channel at low temperatures.

4 pages, 3 figures

References in corpus (6)

• Electrical Detection of Spin Transport in Lateral Ferromagnet-Semiconductor Devices
• Electronic measurement and control of spin transport in Silicon
• Coherent spin transport through a 350-micron-thick Silicon wafer
• Epitaxial ferromagnetic Fe${}_3$Si/Si(111) structures with high-quality hetero-interfaces
• Geometric dephasing-limited Hanle effect in long-distance lateral silicon spin transport devices
• Spin injection in Silicon at zero magnetic field

Cited by in corpus (20)

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• Silicon spin communication
• Analysis of phonon-induced spin relaxation processes in silicon
• Temperature dependence of spin diffusion length in silicon by Hanle-type spin precession
• Electrical spin injection and accumulation in CoFe/MgO/Ge contacts at room temperature
• Electric-field control of spin accumulation signals in silicon at room temperature
• Bias current dependence of spin accumulation signals in a silicon channel detected by a Schottky tunnel contact
• Large spin accumulation voltages in epitaxial Mn5Ge3 contacts on Ge without oxide tunnel barrier
• Room-temperature spin transport in n-Ge probed by four-terminal nonlocal measurements
• Giant enhancement of spin pumping efficiency using Fe3Si ferromagnet
• Temperature evolution of spin accumulation detected electrically in a nondegenerated silicon channel
• Observation of large spin accumulation voltages in non-degenerate Si spin devices due to spin drift effect: Experiments and theory
• Nonmonotonic bias dependence of local spin accumulation signals in ferromagnet/semiconductor lateral spin-valve devices
• Room-temperature detection of spin accumulation in silicon across Schottky tunnel barriers using a MOSFET structure
• Pure spin current transport in a SiGe alloy
• Suppressing spin relaxation in silicon
• Investigation of spin scattering mechanism in silicon channels of Fe/MgO/Si lateral spin valves
• Effect of the magnetic domain structure in the ferromagnetic contact on spin accumulation in silicon