Epitaxial ferromagnetic Fe${}_3$Si/Si(111) structures with high-quality hetero-interfaces

Abstract

To develop silicon-based spintronic devices, we have explored high-quality ferromagnetic Fe${}_3$Si/silicon (Si) structures. Using low-temperature molecular beam epitaxy at 130 ${}^{c}irc$C, we realize epitaxial growth of ferromagnetic Fe${}_3$Si layers on Si (111) with keeping an abrupt interface, and the grown Fe${}_3$Si layer has the ordered $D{O}_3$ phase. Measurements of magnetic and electrical properties for the Fe${}_3$Si/Si(111) yield a magnetic moment of ~ 3.16 $m{u}_B$/f.u. at room temperature and a rectifying Schottky-diode behavior with the ideality factor of ~ 1.08, respectively.

3 pages, 3 figures

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• Electrical Detection of Spin Transport in Lateral Ferromagnet-Semiconductor Devices
• Electronic measurement and control of spin transport in Silicon
• Efficient Electrical Spin Injection from a Magnetic Metal / Tunnel Barrier Contact into a Semiconductor
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Cited by in corpus (8)

• Electrical injection and detection of spin-polarized electrons in silicon through an Fe_3Si/Si Schottky tunnel barrier
• Ferromagnetism and Electronic Structures of Nonstoichiometric Heusler-Alloy Fe_3-xMn_xSi Epilayers Grown on Ge(111)
• Estimation of the spin polarization for Heusler-compound thin films by means of nonlocal spin-valve measurements: Comparison of Co${}_2$FeSi and Fe${}_3$Si
• Large spin accumulation voltages in epitaxial Mn5Ge3 contacts on Ge without oxide tunnel barrier
• Atomically Controlled Epitaxial Growth of Single-Crystalline Germanium Films on a Metallic Silicide
• Giant enhancement of spin pumping efficiency using Fe3Si ferromagnet
• Room-temperature detection of spin accumulation in silicon across Schottky tunnel barriers using a MOSFET structure
• Epitaxial Growth of a Full-Heusler Alloy Co${}_2$FeSi on Silicon by Low-Temperature Molecular Beam Epitaxy