Ferromagnetism and Electronic Structures of Nonstoichiometric Heusler-Alloy Fe_3-xMn_xSi Epilayers Grown on Ge(111)

Abstract

For the study of ferromagnetic materials which are compatible with group-IV semiconductor spintronics, we demonstrate control of the ferromagnetic properties of Heusler-alloys Fe_3-xMn_xSi epitaxially grown on Ge(111) by tuning the Mn composition x. Interestingly, we obtain L2_1-ordered structures even for nonstoichiometric atomic compositions. The Curie temperature of the epilayers with x ~ 0.6 exceeds 300 K. Theoretical calculations indicate that the electronic structures of the nonstoichiometric Fe_3-xMn_xSi alloys become half-metallic for 0.75 < x < 1.5. We discuss the possibility of room-temperature ferromagnetic Fe_3-xMn_xSi/Ge epilayers with high spin polarization.

arXiv comment5 pages, 4 figures

References in corpus (3)

• Slater-Pauling Behavior of the Half-Ferromagnetic Full-Heusler Alloys
• Electronic measurement and control of spin transport in Silicon
• Epitaxial ferromagnetic Fe${}_3$Si/Si(111) structures with high-quality hetero-interfaces

Cited by in corpus (9)

• Seebeck coefficients of half-metallic ferromagnets
• Anomalous transport properties of the halfmetallic ferromagnets Co2TiSi, Co2TiGe, and Co2TiSn
• Anomalous Hall conductivity and electronic structures of Si-substituted Mn${}_2$CoAl epitaxial films
• Complex magnetic behavior and high spin polarization in Fe(3-x)Mn(x)Si alloys
• Nonmonotonic bias dependence of local spin accumulation signals in ferromagnet/semiconductor lateral spin-valve devices
• Room-temperature detection of spin accumulation in silicon across Schottky tunnel barriers using a MOSFET structure
• Direct Evidence for Suppression of the Kondo Effect due to Pure Spin Current
• Effect of Co-Fe substitutions on the room-temperature spin polarization in Co_3-xFe_xSi Heusler-compound films
• Magnetic 2D electron liquid at the surface of Heusler semiconductors