119 citations · 849 across the 18 of their papers we have counts for
18 papers
Exchange-driven magnetoresistance in silicon facilitated by electrical spin injection
Yuichiro Ando, Lan Qing, Yang Song +6
We use electrical spin injection to probe exchange interactions in phosphorus doped silicon (Si:P). The detection is enabled by a magnetoresistance effect that demonstrates the eff…
Large enhancement in the generation efficiency of pure spin currents in Ge using Heusler-compound Co_2FeSi electrodes
K. Kasahara, Y. Fujita, S. Yamada +3
We show nonlocal spin transport in n-Ge based lateral spin-valve devices with highly ordered Co_2FeSi/n^+-Ge Schottky tunnel contacts. Clear spin-valve signals and Hanle-effect cur…
Effect of Co-Fe substitutions on the room-temperature spin polarization in Co_3-xFe_xSi Heusler-compound films
K. Tanikawa, S. Oki, S. Yamada +3
Using low-temperature molecular beam epitaxy, we study substitutions of Fe atoms for Co ones in Co_3-xFe_xSi Heusler-compound films grown on Si and Ge. Even for the low-temperature…
Room-temperature detection of spin accumulation in silicon across Schottky tunnel barriers using a MOSFET structure
K. Hamaya, Y. Ando, K. Masaki +5
Using a metal-oxide-semiconductor field effect transistor (MOSFET) structure with a high-quality CoFe/n^+Si contact, we systematically study spin injection and spin accumulation in…
Atomically Controlled Epitaxial Growth of Single-Crystalline Germanium Films on a Metallic Silicide
S. Yamada, K. Tanikawa, M. Miyao +1
We demonstrate high-quality epitaxial germanium (Ge) films on a metallic silicide, Fe3Si, grown directly on a Ge(111) substrate. Using molecular beam epitaxy techniques, we can obt…
Effect of the magnetic domain structure in the ferromagnetic contact on spin accumulation in silicon
Y. Ando, S. Yamada, K. Kasahara +3
We show a marked effect of the magnetic domain structure in an epitaxial CoFe contact on the spin accumulation signals in Si detected by three-terminal Hanle-effect measurements. C…