Effect of Co-Fe substitutions on the room-temperature spin polarization in Co_3-xFe_xSi Heusler-compound films

Abstract

Using low-temperature molecular beam epitaxy, we study substitutions of Fe atoms for Co ones in Co_3-xFe_xSi Heusler-compound films grown on Si and Ge. Even for the low-temperature grown Heusler-compound films, the Co-Fe atomic substitution at A and C sites can be confirmed by the conversion electron M"ossbauer spectroscopy measurements. As a result, the magnetic moment and room-temperature spin polarization estimated by nonlocal spin-valve measurements are systematically changed with the Co-Fe substitutions. This study experimentally verified that the Co-Fe substitution in Co_3-xFe_xSi Heusler compounds can directly affect the room-temperature spin polarization.

5 pages, 4 figures

References in corpus (5)

• Half-metallic ferromagnets: From band structure to many-body effects
• Substituting the main group element in cobalt - iron based Heusler alloys: Co${}_2$FeAl${}_{1-x}$Si${}_x$
• Epitaxial film growth and magnetic properties of Co_2FeSi
• Ferromagnetism and Electronic Structures of Nonstoichiometric Heusler-Alloy Fe_3-xMn_xSi Epilayers Grown on Ge(111)
• Estimation of the spin polarization for Heusler-compound thin films by means of nonlocal spin-valve measurements: Comparison of Co${}_2$FeSi and Fe${}_3$Si