Substituting the main group element in cobalt - iron based Heusler alloys: CoFeAlSi
arXiv:cond-mat/0612241 · doi:10.1088/0022-3727/40/6/S12
Abstract
This work reports about electronic structure calculations for the Heusler compound CoFeAlSi. Particular emphasis was put on the role of the main group element in this compound. The substitution of Al by Si leads to an increase of the number of valence electrons with increasing Si content and may be seen as electron-doping. Self-consistent electronic structure calculations were performed to investigate the consequences of the electron doping for the magnetic properties. The series CoFeAlSi is found to exhibit half-metallic ferromagnetism and the magnetic moment follows the Slater-Pauling rule. It is shown that the electron-doping stabilises the gap in the minority states for .
arXiv commentJ. Phys. D (accepted)
References in corpus (9)
- Half-metallic ferromagnets: From band structure to many-body effects
- Geometric, electronic, and magnetic structure of CoFeSi: Curie temperature and magnetic moment measurements and calculations
- Investigation of CoFeSi: The Heusler compound with Highest Curie Temperature and Magnetic Moment
- Properties of the quaternary half-metal-type Heusler alloy CoMnFeSi
- Correlation in the transition metal based Heusler compounds CoMnSi and CoFeSi
- Slater-Pauling Rule and Curie-Temperature of Co-based Heusler compounds
- Electronic structure and spectroscopy of the quaternary Heusler alloy CoCrFeAl
- Design of magnetic materials: CoCrFeAl
- Electron Correlations and the Minority-Spin Band Gap in Half-Metallic Heusler Alloys
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- CoFeAl full Heusler compound based spintronic terahertz emitter
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- Effect of Co-Fe substitutions on the room-temperature spin polarization in Co_3-xFe_xSi Heusler-compound films
- Hard X-ray photoelectron spectroscopy on buried, off-stoichiometric CoxMnyGez (x : z = 2 : 0.38) Heusler thin films
- Spin configurations in Co2FeAl0.4Si0.6 Heusler alloy thin film elements
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- studies of CoFeAlSi Heusler alloys