Data Storage: Review of Heusler Compounds

Abstract

In the recent decade, the family of Heusler compounds has attracted tremendous scientific and technological interest in the field of spintronics. This is essentially due to their exceptional magnetic properties, which qualify them as promising functional materials in various data-storage devices, such as giant-magnetoresistance spin valves, magnetic tunnel junctions, and spin-transfer torque devices. In this article, we provide a comprehensive review on the applications of the Heusler family in magnetic data storage. In addition to their important roles in the performance improvement of these devices, we also try to point out the challenges as well as possible solutions, of the current Heusler-based devices. We hope that this review would spark further investigation efforts into efficient incorporation of this eminent family of materials into data storage applications by fully arousing their intrinsic potential.

invited review paper by the Journal of SPIN

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Cited by in corpus (16)

• Half-Heusler Compounds: Promising Materials For Mid-To-High Temperature Thermoelectric Conversion
• Temperature-dependent Gilbert damping of Co2FeAl thin films with different degree of atomic order
• Electronic structure of Zr-Ni-Sn systems: role of clustering and nanostructures in Half-Heusler and Heusler limits
• Thermal Stability and Electrical Control of Magnetization of Heusler/Oxide Interface and Non-collinear Spin Transport of Its Junction
• Tunnel magnetoresistance and spin-transfer-torque switching in polycrystalline Co2FeAl full-Heusler alloy magnetic tunnel junctions on Si/SiO2 amorphous substrates
• Antiferromagnetism in Ru2MnZ (Z=Sn, Sb, Ge, Si) full Heusler alloys: effects of magnetic frustration and chemical disorder
• Magnetism of Hexagonal Mn1.5X0.5Sn (X = Cr, Mn, Fe, Co) Nanomaterials
• First-principles investigation of magnetocrystalline anisotropy oscillations in Co${}_2$FeAl/Ta heterostructures
• A strategic high throughput search for identifying stable Li based half Heusler alloys for spintronics applications
• Symmetry-dependent electron-electron interaction in coherent tunnel junctions resolved by zero bias anomaly measurements
• Integration of antiferromagnetic Heusler compound Ru${}_2$MnGe into spintronic devices
• New memory devices based on the proton transfer process
• First-principles study of spin-transfer torque in Co2MnSi/Al/Co2MnSi spin-valve
• $Abinitio$ studies of Co${}_2$FeAl${}_{1-x}$Si${}_x$ Heusler alloys
• Investigation of the tunnel magnetoresistance in junctions with a strontium stannate barrier
• Structural properties of Co${}_2$TiSi films on GaAs(001)