Data Storage: Review of Heusler Compounds
arXiv:1301.5455 · doi:10.1142/S201032471230006X
Abstract
In the recent decade, the family of Heusler compounds has attracted tremendous scientific and technological interest in the field of spintronics. This is essentially due to their exceptional magnetic properties, which qualify them as promising functional materials in various data-storage devices, such as giant-magnetoresistance spin valves, magnetic tunnel junctions, and spin-transfer torque devices. In this article, we provide a comprehensive review on the applications of the Heusler family in magnetic data storage. In addition to their important roles in the performance improvement of these devices, we also try to point out the challenges as well as possible solutions, of the current Heusler-based devices. We hope that this review would spark further investigation efforts into efficient incorporation of this eminent family of materials into data storage applications by fully arousing their intrinsic potential.
invited review paper by the Journal of SPIN
References in corpus (12)
- Half-Heusler Compounds as a New Class of Three-Dimensional Topological Insulators
- Large magnetoresistance in bcc Co/MgO/Co and FeCo/MgO/FeCo tunneling junctions
- Surface State Transport and Ambipolar Electric Field Effect in Bi2Se3 Nanodevices
- Half-Heusler Topological Insulators: A First-Principle Study with the Tran-Blaha Modified Becke-Johnson Density Functional
- Substituting the main group element in cobalt - iron based Heusler alloys: CoFeAlSi
- Half-metallic ferromagnets for magnetic tunnel junctions
- Non-quasiparticle states in CoMnSi evidenced through magnetic tunnel junction spectroscopy measurements
- Metallic surface electronic state in half-Heusler compounds RPtBi (R = Lu, Dy, Gd)
- Topological Insulators in Ternary Compounds with a Honeycomb Lattice
- Magnetic and transport properties of rare-earth-based half-Heusler phases RPdBi: prospective systems for topological quantum phenomena
- Current-perpendicular-to-plane giant magnetoresistance of a spin valve using Co2MnSi Heusler alloy electrodes
- Effect of interfacial strain on spin injection and spin polarization of Co2CrAl/NaNbO3/Co2CrAl magnetic tunneling junction