Half-metallic ferromagnets for magnetic tunnel junctions

Abstract

Using theoretical arguments, we show that, in order to exploit half-metallic ferromagnets in tunneling magnetoresistance (TMR) junctions, it is crucial to eliminate interface states at the Fermi level within the half-metallic gap; contrary to this, no such problem arises in giant magnetoresistance elements. Moreover, based on an a priori understanding of the electronic structure, we propose an antiferromagnetically coupled TMR element, in which interface states are eliminated, as a paradigm of materials design from first principles. Our conclusions are supported by ab-initio calculations.

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Cited by in corpus (21)

• Half-metallic ferromagnets: From band structure to many-body effects
• Introduction to half-metallic Heusler alloys: Electronic Structure and Magnetic Properties
• Spin-polarization and electronic properties of half-metallic Heusler alloys calculated from first-principles
• The efficient spin injector scheme based on Heusler materials
• Data Storage: Review of Heusler Compounds
• A review of the electronic and magnetic properties of tetrahedrally bonded half-metallic ferromagnets
• Ab-initio calculation of the effective on-site Coulomb interaction parameters for half-metallic magnets
• Surface spin polarization of the non-stoichiometric Heusler compound Co2Mn(alpha)Si
• Structural stability, magnetic and electronic properties of Co2MnSi(001)/MgO heterostructures: A density functional theory study
• Half-metallic ferromagnetism induced by dynamic electron correlations in VAs
• Half-metallicity and magnetism in the Co${}_2$MnAl/CoMnVAl heterostructure
• Spin injection from a half-metal at finite temperatures
• Stable half-metallic ferromagnetism in nonstoichiometric cubic binary chromium chalcogenides
• Scanning tunneling microscopy of surfaces of half-metals: an ab-initio study on NiMnSb(001)
• Ab-initio study of electronic and magnetic properties of Mn${}_2$RuZ/MgO (001) heterojunctions (Z= Al, Ga, Si, Ge)
• Large magnetic anisotropy energy and robust half-metallic ferromagnetism in 2D MnXSe${}_4$ (X = As, Sb)
• Theory for Tunnel Magnetoresistance Oscillation
• IrCrMnZ (Z=Al, Ga, Si, Ge) Heusler alloys as electrode materials for MgO-based magnetic tunneling junctions: A first-principles study
• Structural and magnetic properties of epitaxial films of CoIrMnAl equiatomic quaternary Heusler alloy designed from first-principles calculation
• Influence of image forces on the interlayer exchange interaction in magnetic tunnel junctions with ferroelectric barrier
• Layer-dependent electronic structures and magnetic ground states of polar-polar $\mathrm{LaV}{\mathrm{O}}_3/KTa{\mathrm{O}}_3$ (001) heterostructures