Surface spin polarization of the non-stoichiometric Heusler compound Co2Mn(alpha)Si
arXiv:1110.5451 · doi:10.1103/PhysRevB.85.064407
Abstract
Using a combined approach of spin-resolved photoemission spectroscopy, band structure and photoemission calculations we investigate the influence of bulk defects and surface states on the spin polarization of Co2Mn(alpha)Si thin films with bulk L21 order. We find that for Mn-poor alloys the spin polarization at EF is negative due to the presence of Co_Mn antisite and minority surface state contributions. In Mn-rich alloys, the suppression of Co(Mn) antisites leads to a positive spin polarization at the Fermi energy, and the influence of minority surface states on the photoelectron spin polarization is reduced.
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Cited by in corpus (6)
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- Direct evidence for minority spin gap in the Co2MnSi Heusler alloy
- Structural, chemical and electronic properties of the Co2MnSi(001)/MgO interface
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- Chemical disorder as engineering tool for spin-polarizationin Mn3Ga-based Heusler systems
- Band structure tuning of Heusler compounds revisited: Spin- and momentum-resolved electronic structure analysis of compounds with different band filling