Chemical disorder as engineering tool for spin-polarizationin Mn3Ga-based Heusler systems

Abstract

Our study highlights spin-polarization mechanisms in metals, by focusing on the mobilities of conducting electrons with different spins instead of their quantities. Here, we engineer electron mobility by applying chemical disorder induced by non-stoichiometric variations. As a practical example, we discuss the scheme that establishes such variations in tetragonal Mn3Ga Heusler material. We justify this approach using first-principles calculations of the spin-projected conductivity components based on the Kubo-Greenwood formalism. It follows that, in majority of the cases, even a small substitution of some other transition element instead of Mn may lead to a substantial increase in spin-polarization along the tetragonal axis.

References in corpus (11)

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• Theory of the topological Anderson insulator
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Cited by in corpus (4)

• Heusler 4.0: Tunable Materials
• Magnetism in tetragonal manganese-rich Heusler compounds
• Helical magnetic structure and the anomalous and topological Hall effects in epitaxial B20 Fe${}_{1-y}$Co${}_y$Ge films
• Effect of Co Substitution on Ferrimagnetic Heusler compound Mn3Ga