Theory of the topological Anderson insulator

Abstract

We present an effective medium theory that explains the disorder-induced transition into a phase of quantized conductance, discovered in computer simulations of HgTe quantum wells. It is the combination of a random potential and quadratic corrections proportional to p^2 sigma_z to the Dirac Hamiltonian that can drive an ordinary band insulator into a topological insulator (having an inverted band gap). We calculate the location of the phase boundary at weak disorder and show that it corresponds to the crossing of a band edge rather than a mobility edge. Our mechanism for the formation of a topological Anderson insulator is generic, and would apply as well to three-dimensional semiconductors with strong spin-orbit coupling.

4 pages, 3 figures (updated figures, calculated DOS)

References in corpus (9)

• Quantum Spin Hall Effect and Topological Phase Transition in HgTe Quantum Wells
• Quantum Spin Hall Insulator State in HgTe Quantum Wells
• Anderson Transitions
• Nonlocal edge state transport in the quantum spin Hall state
• The Quantum Spin Hall Effect: Theory and Experiment
• Topological Anderson Insulator
• Critical exponent for the quantum Hall transition
• Disorder effect on 3-dimensional $Z_2$ quantum spin Hall systems
• Two-dimensional spin-filtered chiral network model for the Z_2 quantum spin-Hall effect

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