Localized States and Quantum Spin Hall Effect in Si-Doped InAs/GaSb Quantum Wells

Abstract

We study localized in-gap states and quantum spin Hall effect in Si-doped InAs/GaSb quantum wells. We propose a model describing donor and/or acceptor impurities to describe Si dopants. This model shows in-gap bound states and wide conductance plateau with the quantized value $2e^2/h$ in light dopant concentration, consistent with recent experiments by Du et al. We predict a conductance dip structure due to backward scattering in the region where the localization length $\xi$ is comparable with the sample width $L_y$ but much smaller than the sample length $L_x$.

4+pages main text including 4 figures, supplementary materials with 3 figures are included

References in corpus (7)

• Quantum Spin Hall Effect and Topological Phase Transition in HgTe Quantum Wells
• Quantum Spin Hall Insulator State in HgTe Quantum Wells
• Topological Insulators with Inversion Symmetry
• Nonlocal edge state transport in the quantum spin Hall state
• Quantum Spin Hall Effect in Inverted Type II Semiconductors
• Topological Anderson Insulator
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Cited by in corpus (7)

• Quantum Anomalous Hall Effect in Magnetically Doped InAs/GaSb Quantum Wells
• Disorder Effects in Topological States -- Brief Review of the Recent Developments
• The effect of in-plane magnetic field and applied strain in quantum spin Hall systems: application to InAs/GaSb quantum wells
• Conductance fluctuations in disordered 2D topological insulator wires: From quantum spin-Hall to ordinary quantum phases
• Disorder effects in InAs/GaSb topological insulator candidates
• Magnetotransport properties of the Quantum Spin Hall and Quantum Hall states in an inverted HgTe/CdTe and InAs/GaSb quantum wells
• Hard wall edge confinement in 2D topological insulators and the energy of the Dirac Point