The effect of in-plane magnetic field and applied strain in quantum spin Hall systems: application to InAs/GaSb quantum wells
arXiv:1604.00821 · doi:10.1103/PhysRevB.94.085306
Abstract
Motivated by the recent discovery of quantized spin Hall effect in InAs/GaSb quantum wells\cite{du2013}\cite{xu2014}, we theoretically study the effects of in-plane magnetic field and strain effect to the quantization of charge conductance by using Landauer-Butikker formalism. Our theory predicts a robustness of the conductance quantization against the magnetic field up to a very high field of 20 tesla. We use a disordered hopping term to model the strain and show that the strain may help the quantization of the conductance. Relevance to the experiments will be discussed.
arXiv comment8 pages, 10 figures. Comments are welcome!
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