Creating Magnetic Fields in excess of 1000 T by Misoriented Stacking in a Graphene Bilayer

Abstract

It is well established that some kinds of lattice deformations in graphene monolayer, which change electron hopping in sublattice and affect in-plane motion of electrons, may induce out-of-plane pseudo-magnetic fields as large as 100 T. Here, we demonstrate that stacking misorientation in graphene bilayers mimics the effect of huge in-plane pseudo-magnetic fields greater than 1000 T on the interlayer hopping of electrons. As well as addressing the similarity between the effect of in-plane pseudo-magnetic fields and twisting on the electronic band structure of Bernal graphene bilayer, we point out that in-plane magnetic fields (or twisting) could modify the low-energy pseudospin texture of the graphene bilayer (the pseudospin winding number is reduced from 2 to 1), thereby changing the chiralities of quasiparticles from that of spin 1 to spin 1/2. Our results illustrate the possibility of controllably manipulating electronic properties of Bernal graphene bilayer by introducing the in-plane magnetic field or twisting.

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• Magnetic ratchet effect in bilayer graphene
• Transport properties of bilayer graphene in a strong in-plane magnetic field
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• Cyclotron resonance of the magnetic ratchet effect and second harmonic generation in bilayer graphene
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• Comment on "Creating in-plane pseudomagnetic fields in excess of 1000 T by misoriented stacking in a graphene bilayer"
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• Spin Splitting Induced by a Competition between Quantum Spin Hall Edge States and Valley Edge States
• Insulator-Metal Transition and Magnetic Crossover in Bilayer Graphene
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