Emergence of Interlayer Coherence in Twist-Controlled Graphene Double Layers

Abstract

We report enhanced interlayer tunneling with reduced linewidth at zero interlayer bias in a twist-controlled double monolayer graphene heterostructure in the quantum Hall regime, when the top (${\nu }_{\mathrm{T}}$) and bottom (${\nu }_{\mathrm{B}}$) layer filling factors are near ${\nu }_{\mathrm{T}}=\pm 1/2,\pm 3/2$ and ${\nu }_{\mathrm{B}}=\pm 1/2,\pm 3/2$, and the total filling factor $\nu =\pm 1$ or $\pm 3$. The zero-bias interlayer conductance peaks are stable against variations of layer filling factor, and signal the emergence of interlayer phase coherence. Our results highlight twist control as a key attribute in revealing interlayer coherence using tunneling.

5 pages, 4 figures, includes supplementary material

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Cited by in corpus (8)

• The Quantum Twisting Microscope
• Optical signatures of interlayer electron coherence in a bilayer semiconductor
• Electrical Control of Two-Dimensional Electron-Hole Fluids in the Quantum Hall Regime
• A magnetically-induced Coulomb gap in graphene due to electron-electron interactions
• Time, momentum, and energy resolved pump-probe tunneling spectroscopy of two-dimensional electron systems
• Designing exciton-condensate Josephson junction in quantum Hall heterostructures
• Interface engineering of van der Waals heterostructures towards energy-efficient quantum devices operating at high temperatures
• Electrically driven plasmon-polaritonic bistability in Dirac electron tunneling transistors