Gate-Tunable Resonant Tunneling in Double Bilayer Graphene Heterostructures
arXiv:1412.3027 · doi:10.1021/nl503756y
Abstract
We demonstrate gate-tunable resonant tunneling and negative differential resistance in the interlayer current-voltage characteristics of rotationally aligned double bilayer graphene heterostructures separated by hexagonal boron-nitride (hBN) dielectric. An analysis of the heterostructure band alignment using individual layer densities, along with experimentally determined layer chemical potentials indicates that the resonance occurs when the energy bands of the two bilayer graphene are aligned. We discuss the tunneling resistance dependence on the interlayer hBN thickness, as well as the resonance width dependence on mobility and rotational alignment.
26 pages, 6 figures; supporting information includes one figure
References in corpus (11)
- Boron nitride substrates for high-quality graphene electronics
- Micrometer-scale ballistic transport in encapsulated graphene at room temperature
- Realization of a High Mobility Dual-gated Graphene Field Effect Transistor with Al2O3 Dielectric
- Atomically thin boron nitride: a tunnelling barrier for graphene devices
- Ab Initio Theory of Gate Induced Gaps in Graphene Bilayers
- Twist-controlled resonant tunnelling in graphene-boron nitride-graphene heterostructures
- Strong Coulomb drag and broken symmetry in double-layer graphene
- SymFET: A Proposed Symmetric Graphene Tunneling Field Effect Transistor
- Coulomb Drag and Magnetotransport in Graphene Double Layers
- Coherent tunneling and negative differential conductivity in graphene-hBN-graphene heterostructure
- Tunneling between Dilute GaAs Hole Layers
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