Multiple negative differential conductance regions and inelastic phonon assisted tunneling in graphene-hBN-graphene structures
arXiv:1603.04446 · doi:10.1103/PhysRevB.93.235403
Abstract
In this paper we study in detail the effect of the rotational alignment between a hexagonal boron nitride (hBN) slab and the graphene layers in the vertical current of a a graphene-hBN-graphene device. We show how for small rotational angles, the transference of momentum by the hBN crystal lattice leads to multiple peaks in the I-V curve of the device, giving origin to multiple regions displaying negative differential conductance. We also study the effect of scattering by phonons in the vertical current an see how the opening up of inelastic tunneling events allowed by spontaneous emission of optical phonons leads to sharp peaks in the second derivative of the current.
26 pages, 15 figures
References in corpus (41)
- Electric Field Effect in Atomically Thin Carbon Films
- Two Dimensional Atomic Crystals
- Van der Waals heterostructures
- Moire bands in twisted double-layer graphene
- Field-effect tunneling transistor based on vertical graphene heterostructures
- Vertical Field Effect Transistor based on Graphene-WS2 Heterostructures for flexible and transparent electronics
- Graphene bilayer with a twist: electronic structure
- Cloning of Dirac fermions in graphene superlattices
- Emergence of Superlattice Dirac Points in Graphene on Hexagonal Boron Nitride
- Colloquium: The transport properties of graphene: An introduction
- Cross-sectional imaging of individual layers and buried interfaces of graphene-based heterostructures and superlattices
- Commensurate-incommensurate transition for graphene on hexagonal boron nitride
- Atomically thin boron nitride: a tunnelling barrier for graphene devices
- Single Layer Behavior and Its Breakdown in Twisted Graphene Layers
- Continuum Model of the Twisted Bilayer
- Picosecond photoresponse in van der Waals heterostructures
- Tunable metal-insulator transition in double-layer graphene heterostructures
- Twist-controlled resonant tunnelling in graphene-boron nitride-graphene heterostructures
- Optical Absorption in Twisted Bilayer Graphene
- New Generation of Massless Dirac Fermions in Graphene under External Periodic Potentials
- The phonon dispersion of graphite revisited
- Generic Miniband Structure of Graphene on a Hexagonal Substrate
- Ab-Initio Theory of Moiré Superlattice Bands in Layered Two-Dimensional Materials
- Electronic properties of graphene hexagonal boron nitride moiré superlattice
- Transport Between Twisted Graphene Layers
- Stability of boron nitride bilayers: Ground state energies, interlayer distances, and tight-binding description
- Zero Energy Modes and Gate-Tunable Gap in Graphene on hexagonal Boron Nitride
- Gate-Tunable Resonant Tunneling in Double Bilayer Graphene Heterostructures
- Single-Particle Tunneling in Doped Graphene-Insulator-Graphene Junctions
- Interlayer interaction in general incommensurate atomic layers
- SymFET: A Proposed Symmetric Graphene Tunneling Field Effect Transistor
- Phonon-assisted resonant tunneling of electrons in graphene-boron nitride transistors
- Graphene on incommensurate substrates: trigonal warping and emerging Dirac cone replicas with halved group velocity
- Phonon mediated interlayer conductance in twisted graphene bilayers
- Graphene-hexagonal boron nitride resonant tunneling diodes as high-frequency oscillators
- Heterostructure bilayer graphene-hBN: Interplay between misalignment, interlayer asymmetry, and trigonal warping
- Coherent tunneling and negative differential conductivity in graphene-hBN-graphene heterostructure
- Resonant and non-dissipative tunneling in independently contacted graphene structures
- Theory of resonant tunneling in bilayer-graphene/hexagonal-boron-nitride heterostructures
- Twist-controlled Resonant Tunnelling between Monolayer and Bilayer Graphene
- THz conductivity of graphene on boron nitride
Cited by in corpus (7)
- Hot carriers in graphene -- fundamentals and applications
- Gate-versus defect-induced voltage drop and negative differential resistance in vertical graphene heterostructures
- Interlayer Transport through a Graphene / Rotated-Boron-Nitride / Graphene Heterostructure
- Plasmon-assisted resonant tunneling in graphene-based heterostructures
- General theoretical description of angle-resolved photoemission spectroscopy of van der Waals structures
- Transmission across a bilayer graphene region
- Electrically driven plasmon-polaritonic bistability in Dirac electron tunneling transistors