SymFET: A Proposed Symmetric Graphene Tunneling Field Effect Transistor

Abstract

In this work, an analytical model to calculate the channel potential and current-voltage characteristics in a Symmetric tunneling Field-Effect-Transistor (SymFET) is presented. The current in a SymFET flows by tunneling from an n-type graphene layer to a p-type graphene layer. A large current peak occurs when the Dirac points are aligned at a particular drain-to- source bias VDS . Our model shows that the current of the SymFET is very weakly dependent on temperature. The resonant current peak is controlled by chemical doping and applied gate bias. The on/off ratio increases with graphene coherence length and doping. The symmetric resonant peak is a good candidate for high-speed analog applications, and can enable digital logic similar to the BiSFET. Our analytical model also offers the benefit of permitting simple analysis of features such as the full-width-at-half-maximum (FWHM) of the resonant peak and higher order harmonics of the nonlinear current. The SymFET takes advantage of the perfect symmetry of the bandstructure of 2D graphene, a feature that is not present in conventional semiconductors.

References in corpus (5)

• Boron nitride substrates for high-quality graphene electronics
• Field-effect tunneling transistor based on vertical graphene heterostructures
• Micrometer-scale ballistic transport in encapsulated graphene at room temperature
• Multicomponent fractional quantum Hall effect in graphene
• Single-Particle Tunneling in Doped Graphene-Insulator-Graphene Junctions

Cited by in corpus (22)

• Resonant tunnelling and negative differential conductance in graphene transistors
• Gate-Tunable Resonant Tunneling in Double Bilayer Graphene Heterostructures
• Single Particle Transport in Two-dimensional Heterojunction Interlayer Tunneling Field Effect Transistor
• Graphene Nanoribbon Field-Effect Transistors on Wafer-Scale Epitaxial Graphene on SiC substrates
• Resonant tunnelling between the chiral Landau states of twisted graphene lattices
• Coherent Interlayer Tunneling and Negative Differential Resistance with High Current Density in Double Bilayer Graphene-WSe2 Heterostructures
• Graphene-hexagonal boron nitride resonant tunneling diodes as high-frequency oscillators
• Interband Tunneling in 2D Crystal Semiconductors
• Injection terahertz laser using the resonant inter-layer radiative transitions in double-graphene-layer structure
• Theory of Graphene-Insulator-Graphene Tunnel Junctions
• Spin-Conserving Resonant Tunneling in Twist-Controlled WSe2-hBN-WSe2 Heterostructures
• Dynamic effects in double graphene-layer structures with inter-layer resonant-tunneling negative conductivity
• First principle investigation of Tunnel FET based on nanoribbons from topological two-dimensional material
• DFT Simulations of Inter-Graphene-Layer Coupling with Rotationally Misaligned hBN Tunnel Barriers in Graphene/hBN/Graphene Tunnel FETs
• Double injection, resonant-tunneling recombination, and current-voltage characteristics in double-graphene-layer structures
• Gate-versus defect-induced voltage drop and negative differential resistance in vertical graphene heterostructures
• Planar graphene tunnel field-effect transistor
• Formation of hexagonal Boron Nitride on Graphene-covered Copper Surfaces
• Interlayer Transport through a Graphene / Rotated-Boron-Nitride / Graphene Heterostructure
• Multiple negative differential conductance regions and inelastic phonon assisted tunneling in graphene-hBN-graphene structures
• Characteristics of Interlayer Tunneling Field Effect Transistors Computed by a "DFT-Bardeen" Method
• Voltage-Controlled Low-Energy Switching of Nanomagnets through Ruderman-Kittel-Kasuya-Yosida Interactions for Magnetoelectric Device Applications