Theory of Graphene-Insulator-Graphene Tunnel Junctions
arXiv:1404.2122 · doi:10.1116/1.4871760
Abstract
Graphene-insulator-graphene vertical tunneling structures are discussed from a theoretical perspective. Momentum conservation in such devices leads to highly nonlinear current-voltage characteristics, which with gates on the tunnel junction form potentially useful transistor structures. Two prior theoretical treatments of such devices are discussed; the treatments are shown to be formally equivalent, although some differences in their implementations are identified. The limit of zero momentum conservation in the theory is explicitly considered, with a formula involving the density-of-states of the graphene electrodes recovered in this limit. Various predictions of the theory are compared to experiment.
17 pages; 5 figures; accepted for publication in J. Vac. Sci. Technol B; v2 corrects several typographical errors and expands the caption of fig 2
References in corpus (4)
Cited by in corpus (17)
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