Resonant tunneling in graphene-ferroelectric-graphene junctions
arXiv:2206.13249 · doi:10.1103/PhysRevB.106.144110
Abstract
We study tunnel junctions consisting of a two-dimensional ferroelectric (FE) material sandwiched between graphene electrodes. We formulate a theory for the interplay of the FE polarization and induced free charges in such devices, taking into account quantum capacitance effects. We predict a gate-sensitive FE voltage difference across the device, which can be measured using electrostatic force microscopy. Incorporating this electrostatic theory in the tunneling current-voltage characteristics, we identify a resonance peak associated with aligned Dirac cones as a highly sensitive probe of the FE polarization of the junction. This opens the way for device applications with few atom-thick FE layers acting as readable ultra-high-density memory.
arXiv comment9 pages, 6 figures
References in corpus (12)
- Stacking-engineered ferroelectricity in bilayer boron nitride
- Giant Electroresistance in Ferroelectric Tunnel Junctions
- Interfacial Ferroelectricity by van-der-Waals Sliding
- Resonant tunnelling and negative differential conductance in graphene transistors
- Twist-controlled resonant tunnelling in graphene-boron nitride-graphene heterostructures
- Interfacial ferroelectricity in marginally twisted 2D semiconductors
- Electroresistance effects in ferroelectric tunnel barriers
- Single-Particle Tunneling in Doped Graphene-Insulator-Graphene Junctions
- Direct measurement of ferroelectric polarization in a tunable semimetal
- Theory of Graphene-Insulator-Graphene Tunnel Junctions
- Coherent tunneling and negative differential conductivity in graphene-hBN-graphene heterostructure
- Theory of polar domains in moiré heterostructures