Modeling of a vertical tunneling graphene heterojunction field-effect transistor
arXiv:1206.5077 · doi:10.1063/1.4737394
Abstract
Vertical tunneling field-effect-transistor (FET) based on graphene heterojunctions with layers of hBN is simulated by self-consistent quantum transport simulations. It is found that the asymmetric p-type and n-type conduction is due to work function deference between the graphene contact and the tunneling channel material. Modulation of the bottom-graphene-contact plays an important role in determining the switching characteristic of the device. Due to the electrostatic short-channel-effects stemming from the vertical-FET structure, the output I-V characteristics do not saturate. The scaling behaviors the vertical-FET as a function of the gate insulator thickness and the thickness of the tunneling channel material are examined.
http://dx.doi.org/10.1063/1.4737394
References in corpus (13)
- Electric Field Effect in Atomically Thin Carbon Films
- The electronic properties of graphene
- Boron nitride substrates for high-quality graphene electronics
- Energy Band Gap Engineering of Graphene Nanoribbons
- Control of graphene's properties by reversible hydrogenation
- Chiral tunneling and the Klein paradox in graphene
- Field-effect tunneling transistor based on vertical graphene heterostructures
- Biased bilayer graphene: semiconductor with a gap tunable by electric field effect
- Gate-induced insulating state in bilayer graphene devices
- Quantum interference and Klein tunneling in graphene heterojunctions
- Selective transmission of Dirac electrons and ballistic magnetoresistance of \textit{n-p} junctions in graphene
- Evidence of Klein tunneling in graphene p-n junctions
- Stability of boron nitride bilayers: Ground state energies, interlayer distances, and tight-binding description
Cited by in corpus (11)
- Resonant tunnelling and negative differential conductance in graphene transistors
- Large Current Modulation and Spin-Dependent Tunneling of Vertical Graphene/MoS Heterostructures
- Negative Differential Resistance in Boron Nitride Graphene Heterostructures: Physical Mechanisms and Size Scaling Analysis
- Theory of Graphene-Insulator-Graphene Tunnel Junctions
- Resonant and non-dissipative tunneling in independently contacted graphene structures
- Theory of resonant tunneling in bilayer-graphene/hexagonal-boron-nitride heterostructures
- Valley filter from magneto-tunneling between single and bi-layer graphene
- Operating Principles of Vertical Transistors Based on Monolayer Two-Dimensional Semiconductor Heterojunctions
- Interlayer Transport through a Graphene / Rotated-Boron-Nitride / Graphene Heterostructure
- Magneto-tunnelling spectroscopy of chiral two-dimensional electron systems
- Transport gap in vertical devices made of incommensurately misoriented graphene layers