Magneto-tunnelling spectroscopy of chiral two-dimensional electron systems

Abstract

We present a theoretical study of momentum-resolved tunneling between parallel two-dimensional conductors whose charge carriers have a (pseudo-)spin-1/2 degree of freedom that is strongly coupled to their linear orbital momentum. Specific examples are single and bilayer graphene as well as single-layer molybdenum disulphide. Resonant behavior of the differential tunneling conductance exhibited as a function of an in-plane magnetic field and bias voltage is found to be strongly affected by the (pseudo-)spin structure of the tunneling matrix. We discuss ramifications for the direct measurement of electronic properties such as Fermi surfaces and the dispersion curves. Furthermore, using a graphene double-layer structure as an example, we show how magneto-tunneling transport can be used to measure the pseudo-spin structure of tunnel matrix elements, thus enabling electronic characterization of the barrier material.

10 pages, 5 figures, RevTex 4.1, v2: expanded version with results added for transport in the non-linear regime and in tilted magnetic fields

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Cited by in corpus (6)

• Tuning the valley and chiral quantum state of Dirac electrons in van der Waals heterostructures
• Resonant tunnelling between the chiral Landau states of twisted graphene lattices
• Valley filter from magneto-tunneling between single and bi-layer graphene
• Twisted monolayer and bilayer graphene for vertical tunneling transistors
• Effects of a tilted magnetic field in a Dirac double layer
• In-plane Chiral Tunneling and Out-of-plane Valley-polarized Quantum Tunneling in Twisted Graphene Trilayer