Twisted monolayer and bilayer graphene for vertical tunneling transistors
arXiv:2103.13658 · doi:10.1063/5.0048191
Abstract
We prepare twist-controlled resonant tunneling transistors consisting of monolayer (Gr) and Bernal bilayer (BGr) graphene electrodes separated by a thin layer of hexagonal boron nitride (hBN). The resonant conditions are achieved by closely aligning the crystallographic orientation of the graphene electrodes, which leads to momentum conservation for tunneling electrons at certain bias voltages. Under such conditions, negative differential conductance (NDC) can be achieved. Application of in-plane magnetic field leads to electrons acquiring additional momentum during the tunneling process, which allows control over the resonant conditions.
References in corpus (10)
- The electronic properties of graphene
- 2D materials and van der Waals heterostructures
- Boron nitride substrates for high-quality graphene electronics
- The electronic properties of bilayer graphene
- Atomically thin boron nitride: a tunnelling barrier for graphene devices
- Twist-controlled resonant tunnelling in graphene-boron nitride-graphene heterostructures
- Gate-Tunable Resonant Tunneling in Double Bilayer Graphene Heterostructures
- Tuning the valley and chiral quantum state of Dirac electrons in van der Waals heterostructures
- Signatures of phonon and defect-assisted tunneling in planar metal-hexagonal boron nitride-graphene junctions
- Planar and van der Waals heterostructures for vertical tunnelling single electron transistors