Probing the features of electron dispersion by tunneling between slightly twisted bilayer graphene sheets
arXiv:2511.09550 · doi:10.1063/5.0303858
Abstract
Tunneling conductance between two bilayer graphene (BLG) sheets separated by 2 nm-thick insulating barrier was measured in two devices with the twist angles between BLGs less than 1°. At small bias voltages, the tunneling occurs with conservation of energy and momentum at the points of intersection between two relatively shifted Fermi circles. Here, we experimentally found and theoretically described signatures of electron-hole asymmetric band structure of BLG: since holes are heavier, the tunneling conductance is enhanced at the hole doping due to the higher density of states. Another key feature of BLG that we explore is gap opening in a vertical electric field with a strong polarization of electron wave function at van Hove singularities near the gap edges. This polarization, by shifting electron wave function in one BLG closer to or father from the other BLG, gives rise to asymmetric tunneling resonances in the conductance around charge neutrality points, which result in strong sensitivity of the tunneling current to minor changes of the gate voltages. The observed phenomena are reproduced by our theoretical model taking into account electrostatics of the dual-gated structure, quantum capacitance effects, and self-consistent gap openings in both BLGs.
References in corpus (25)
- Van der Waals heterostructures
- 2D materials and van der Waals heterostructures
- Vertical Field Effect Transistor based on Graphene-WS2 Heterostructures for flexible and transparent electronics
- Asymmetry gap in the electronic band structure of bilayer graphene
- The electronic properties of bilayer graphene
- Resonant tunnelling and negative differential conductance in graphene transistors
- Ab Initio Theory of Gate Induced Gaps in Graphene Bilayers
- Twist-controlled resonant tunnelling in graphene-boron nitride-graphene heterostructures
- Excitonic superfluid phase in Double Bilayer Graphene
- Tunable band gaps in bilayer graphene-BN heterostructures
- Gate-Tunable Resonant Tunneling in Double Bilayer Graphene Heterostructures
- Quantum cascade of new correlated phases in trigonally warped bilayer graphene
- Cascade of isospin phase transitions in Bernal bilayer graphene at zero magnetic field
- Electron-electron interaction and electron-hole asymmetry in bilayer graphene
- The Quantum Twisting Microscope
- Strongly enhanced tunneling at total charge neutrality in double bilayer graphene-WSe heterostructures
- Tuning the valley and chiral quantum state of Dirac electrons in van der Waals heterostructures
- Resonant tunnelling between the chiral Landau states of twisted graphene lattices
- Coherent Interlayer Tunneling and Negative Differential Resistance with High Current Density in Double Bilayer Graphene-WSe2 Heterostructures
- Visualizing Atomic-Scale Negative Differential Resistance in Bilayer Graphene
- Twist-controlled Resonant Tunnelling between Monolayer and Bilayer Graphene
- Twisted monolayer and bilayer graphene for vertical tunneling transistors
- Sublattice dependence and gate-tunability of midgap and resonant states induced by native dopants in Bernal-stacked bilayer graphene
- Valley-polarised tunnelling currents in bilayer graphene tunnelling transistors
- Quantum Lifetime Spectroscopy and Magnetotunneling in Double Bilayer Graphene Heterostructures