Sublattice dependence and gate-tunability of midgap and resonant states induced by native dopants in Bernal-stacked bilayer graphene

Abstract

The properties of semiconductors can be crucially impacted by midgap states induced by dopants, which can be native or intentionally incorporated in the crystal lattice. For Bernal-stacked bilayer graphene (BLG), which has a tunable bandgap, the existence of midgap states induced by dopants has been conjectured, but never confirmed experimentally. Here, we report scanning tunneling microscopy and spectroscopy results, supported by tight-binding calculations, that demonstrate the existence of midgap states in BLG. We show that the midgap state in BLG -- for which we demonstrate gate-tunability -- appears when the dopant is hosted on the non-dimer sublattice sites. We further evidence the presence of narrow resonances at the onset of the high energy bands (valence or conduction, depending on the dopant type) when the dopants lie on the dimer sublattice sites. These results suggest that dopants/defects can play an important role in the transport and optical properties of multilayer graphene samples, especially at energies close to the band extrema.

Includes supplementary material

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Cited by in corpus (4)

• Direct Visualization of Native Defects in Graphite and Their Effect on the Electronic Properties of Bernal-Stacked Bilayer Graphene
• Isolated and hybrid bilayer graphene rings
• Electronic structure and transport in materials with flat bands: 2D materials and quasicrystals
• Probing the features of electron dispersion by tunneling between slightly twisted bilayer graphene sheets