Electronic Transport in Disordered Bilayer and Trilayer Graphene

Abstract

We present a detailed numerical study of the electronic transport properties of bilayer and trilayer graphene within a framework of single-electron tight-binding model. Various types of disorder are considered, such as resonant (hydrogen) impurities, vacancies, short- or long-range Gaussian random potentials, and Gaussian random nearest neighbor hopping. The algorithms are based on the numerical solution of the time-dependent Schr ödinger equation and applied to calculate the density of states and conductivities (via the Kubo formula) of large samples containing millions of atoms. In the cases under consideration, far enough from the neutrality point, depending on the strength of disorders and the stacking sequence, a linear or sublinear electron-density dependent conductivity is found. The minimum conductivity ${\sigma }_{\min }\approx 2e^2/h$ (per layer) at the charge neutrality point is the same for bilayer and trilayer graphene, independent of the type of the impurities, but the plateau of minimum conductivity around the neutrality point is only observed in the presence of resonant impurities or vacancies, originating from the formation of the impurity band.

14 pages, 11 figures

References in corpus (38)

• The electronic properties of graphene
• Giant Intrinsic Carrier Mobilities in Graphene and Its Bilayer
• Biased bilayer graphene: semiconductor with a gap tunable by electric field effect
• Unconventional quantum Hall effect and Berry's phase of 2pi in bilayer graphene
• Gate-induced insulating state in bilayer graphene devices
• Andreev reflection and Klein tunneling in graphene
• Asymmetry gap in the electronic band structure of bilayer graphene
• Carrier transport in 2D graphene layers
• Colloquium: The transport properties of graphene: An introduction
• Quantum Hall Ferromagnetism in Graphene
• Electronic states and Landau levels in graphene stacks
• Disorder Induced Localized States in Graphene
• Electronic transport in graphene: A semi-classical approach including midgap states
• Electron scattering on microscopic corrugations in graphene
• Electron transport in disordered graphene
• Band Structure of ABC-Stacked Graphene Trilayers
• Modeling disorder in graphene
• Strong Suppression of Electrical Noise in Bilayer Graphene Nano Devices
• Charge Transport in Disordered Graphene-Based Low Dimensional Materials
• Resonant scattering by realistic impurities in graphene
• Electronic properties of bilayer and multilayer graphene
• Electron states of mono- and bilayer graphene on SiC probed by STM
• Transport in Bilayer Graphene: Calculations within a self-consistent Born approximation
• On resonant scatterers as a factor limiting carrier mobility in graphene
• Modeling electronic structure and transport properties of graphene with resonant scattering centers
• Electronic Transport in Dual-gated Bilayer Graphene at Large Displacement Fields
• Adsorbate-limited conductivity of graphene
• Symmetry Breaking in Few Layer Graphene Films
• Gate-induced interlayer asymmetry in ABA-stacked trilayer graphene
• Orthogonality catastrophe and Kondo effect in graphene
• Localized states at zigzag edges of bilayer graphene
• Inducing energy gaps in graphene monolayer and bilayer
• Theory of charged impurity scattering in two dimensional graphene
• Scattering of charge carriers by point defects in bilayer graphene
• Finite Conductivity Minimum in Bilayer Graphene without Charge Inhomogeneities
• Quantum Hall effect in bilayer and multilayer graphenes with finite gate voltage
• Tuning impurity states in bilayer graphene
• Distortion of the perfect lattice structure in bilayer graphene

Cited by in corpus (10)

• Transport and Optical Properties of Single- and Bilayer Black Phosphorus with Defects
• Excitation spectrum and high energy plasmons in single- and multi-layer graphene
• Lattice-layer entanglement in Bernal-stacked bilayer graphene
• Semiclassical Boltzmann transport theory for graphene multilayers
• Sublattice dependence and gate-tunability of midgap and resonant states induced by native dopants in Bernal-stacked bilayer graphene
• A Time-Dependent Random State Approach for Large-scale Density Functional Calculations
• Impurity and dispersion effects on the linear magnetoresistance in the quantum limit
• Disorder induced field effect transistor in bilayer and trilayer graphene
• Electronic transport properties and quantum localization effects monitored by selective functionalization in Bernal bilayer graphene
• Charge screening and carrier transport in AA-stacked bilayer graphene: tuning via a perpendicular electric field