Electronic Transport in Disordered Bilayer and Trilayer Graphene

Abstract

We present a detailed numerical study of the electronic transport properties of bilayer and trilayer graphene within a framework of single-electron tight-binding model. Various types of disorder are considered, such as resonant (hydrogen) impurities, vacancies, short- or long-range Gaussian random potentials, and Gaussian random nearest neighbor hopping. The algorithms are based on the numerical solution of the time-dependent Schr ödinger equation and applied to calculate the density of states and conductivities (via the Kubo formula) of large samples containing millions of atoms. In the cases under consideration, far enough from the neutrality point, depending on the strength of disorders and the stacking sequence, a linear or sublinear electron-density dependent conductivity is found. The minimum conductivity ${\sigma }_{\min }\approx 2e^2/h$ (per layer) at the charge neutrality point is the same for bilayer and trilayer graphene, independent of the type of the impurities, but the plateau of minimum conductivity around the neutrality point is only observed in the presence of resonant impurities or vacancies, originating from the formation of the impurity band.

arXiv comment14 pages, 11 figures

References in corpus (66)

• The electronic properties of graphene
• Graphene: Status and Prospects
• Giant Intrinsic Carrier Mobilities in Graphene and Its Bilayer
• Landau level degeneracy and quantum Hall effect in a graphite bilayer
• Biased bilayer graphene: semiconductor with a gap tunable by electric field effect
• Unconventional quantum Hall effect and Berry's phase of 2pi in bilayer graphene
• Gate-induced insulating state in bilayer graphene devices
• Graphene bilayer with a twist: electronic structure
• Electronic Properties of Disordered Two-Dimensional Carbon
• Andreev reflection and Klein tunneling in graphene
• Asymmetry gap in the electronic band structure of bilayer graphene
• Carrier transport in 2D graphene layers
• Molecular Doping of Graphene
• Colloquium: The transport properties of graphene: An introduction
• Gauge fields in graphene
• Quantum Hall Ferromagnetism in Graphene
• Electronic states and Landau levels in graphene stacks
• Graphene: new bridge between condensed matter physics and quantum electrodynamics
• Zitterbewegung, chirality, and minimal conductivity in graphene
• Disorder Induced Localized States in Graphene
• Electronic transport in graphene: A semi-classical approach including midgap states
• Electron scattering on microscopic corrugations in graphene
• Carrier scattering, mobilities and electrostatic potential in mono-, bi- and tri-layer graphenes
• Electron transport in disordered graphene
• Band Structure of ABC-Stacked Graphene Trilayers
• Modeling disorder in graphene
• Strong Suppression of Electrical Noise in Bilayer Graphene Nano Devices
• Charge Transport in Disordered Graphene-Based Low Dimensional Materials
• Resonant scattering by realistic impurities in graphene
• Broken symmetry states and divergent resistance in suspended bilayer graphene
• Electronic properties of bilayer and multilayer graphene
• Electron states of mono- and bilayer graphene on SiC probed by STM
• Electronic properties of graphene multilayers
• Transport in Bilayer Graphene: Calculations within a self-consistent Born approximation
• On resonant scatterers as a factor limiting carrier mobility in graphene
• Modeling electronic structure and transport properties of graphene with resonant scattering centers
• Elastic scattering theory and transport in graphene
• Electronic Transport in Dual-gated Bilayer Graphene at Large Displacement Fields
• Adsorbate-limited conductivity of graphene
• Electron-electron interactions and the phase diagram of a graphene bilayer
• Fast Algorithm for Finding the Eigenvalue Distribution of Very Large Matrices
• Symmetry Breaking in Few Layer Graphene Films
• Gate-induced interlayer asymmetry in ABA-stacked trilayer graphene
• Theory of carrier transport in bilayer graphene
• Orthogonality catastrophe and Kondo effect in graphene
• Silicon nitride gate dielectrics and bandgap engineering in graphene layers
• Disorder and Electronic Transport in Graphene
• Localized states at zigzag edges of bilayer graphene
• Electronic properties of a biased graphene bilayer
• Inducing energy gaps in graphene monolayer and bilayer
• Impurities in a Biased Graphene Bilayer
• Conductivity engineering of graphene by defect formation
• Theory of charged impurity scattering in two dimensional graphene
• Charged impurity scattering in bilayer graphene
• Charge transport in graphene with resonant scatterers
• Generalized kinetic equations for charge carriers in graphene
• Scattering of charge carriers by point defects in bilayer graphene
• Diffusion of electrons in random magnetic fields,
• Finite Conductivity Minimum in Bilayer Graphene without Charge Inhomogeneities
• Screening-Induced Transport at Finite Temperature in Bilayer Graphene
• A new type of vacancy-induced localized states in multilayer graphene
• Electron energy level statistics in graphene quantum dots
• Electronic Structure of Bilayer Graphene: A Real-space Green's Function Study
• Quantum Hall effect in bilayer and multilayer graphenes with finite gate voltage
• Tuning impurity states in bilayer graphene
• Distortion of the perfect lattice structure in bilayer graphene

Cited by in corpus (30)

• Electronic properties of graphene-based bilayer systems
• Transport and Optical Properties of Single- and Bilayer Black Phosphorus with Defects
• Landau Level Spectrum of ABA- and ABC-stacked Trilayer Graphene
• Excitation spectrum and high energy plasmons in single- and multi-layer graphene
• Linear Scaling Quantum Transport Methodologies
• Optical conductivity of disordered graphene beyond the Dirac cone approximation
• Quantum Hall Effect and Semimetallic Behavior of Dual-Gated ABA-Stacked Trilayer Graphene
• Random State Technology
• Screening and plasmons in pure and disordered single- and bilayer black phosphorus
• Efficient linear-scaling quantum transport calculations on graphics processing units and applications on electron transport in graphene
• Defect-induced magnetism and Yu-Shiba-Rusinov states in twisted bilayer graphene
• Lattice-layer entanglement in Bernal-stacked bilayer graphene
• Electronic and Optical properties of transition metal dichalcogenides under symmetric and asymmetric field-effect doping
• Electrically tunable resonant scattering in fluorinated bilayer graphene
• Semiclassical Boltzmann transport theory for graphene multilayers
• Strain- and Adsorption-Dependent Electronic States and Transport or Localization in Graphene
• Conductivity and scattering in graphene bilayers: numerically exact results vs. Boltzmann approach
• Sublattice dependence and gate-tunability of midgap and resonant states induced by native dopants in Bernal-stacked bilayer graphene
• Anomalous Ballistic Transport in Disordered Bilayer Graphene: Dimer Vacancies induced Dirac Semimetal
• Numerical analysis of electronic conductivity in graphene with resonant adsorbates: comparison of monolayer and Bernal bilayer
• Comparison of microscopic models for disorder in bilayer graphene: Implications for the density of states and the optical conductivity
• A Time-Dependent Random State Approach for Large-scale Density Functional Calculations
• Layer-resolved conductivities in multilayer graphenes
• Transport through graphene nanoribbons: suppression of transverse quantization by symmetry breaking
• Impurity and dispersion effects on the linear magnetoresistance in the quantum limit
• Electronic transport properties and quantum localization effects monitored by selective functionalization in Bernal bilayer graphene
• Disorder induced field effect transistor in bilayer and trilayer graphene
• Electron-electron interactions in non-equilibrium bilayer graphene
• Charge screening and carrier transport in AA-stacked bilayer graphene: tuning via a perpendicular electric field
• Collective resonances near zero energy induced by a point defect in bilayer graphene