Electronic properties of a biased graphene bilayer

Abstract

We study, within the tight-binding approximation, the electronic properties of a graphene bilayer in the presence of an external electric field applied perpendicular to the system -- \emph{biased bilayer}. The effect of the perpendicular electric field is included through a parallel plate capacitor model, with screening correction at the Hartree level. The full tight-binding description is compared with its 4-band and 2-band continuum approximations, and the 4-band model is shown to be always a suitable approximation for the conditions realized in experiments. The model is applied to real biased bilayer devices, either made out of SiC or exfoliated graphene, and good agreement with experimental results is found, indicating that the model is capturing the key ingredients, and that a finite gap is effectively being controlled externally. Analysis of experimental results regarding the electrical noise and cyclotron resonance further suggests that the model can be seen as a good starting point to understand the electronic properties of graphene bilayer. Also, we study the effect of electron-hole asymmetry terms, as the second-nearest-neighbor hopping energies $t^{\prime }$ (in-plane) and ${\gamma }_4$ (inter-layer), and the on-site energy $\Delta$.

15 pages, 9 figures, published shorter version

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• Tunnel field-effect transistors for sensitive terahertz detection
• Interfacial Properties of Bilayer and Trilayer Graphene on Metal Substrates
• Electronic Transport in Disordered Bilayer and Trilayer Graphene
• Thermoelectric Transport of Massive Dirac Fermions in Bilayer Graphene
• Electric-field controlled spin in bilayer triangular graphene quantum dots
• On-Demand Spin-Orbit Interaction from Which-Layer Tunability in Bilayer Graphene
• Optical absorption of twisted bilayer graphene with interlayer potential asymmetry
• Reduced work function of graphene by metal adatoms
• Isospin and momentum polarized orders in bilayer graphene
• Electronic transport across linear defects in graphene
• Orbital and interlayer Skyrmions crystals in bilayer graphene
• Quantum Hall ferromagnetic phases in the Landau level N=0 of a graphene bilayer
• Topologically confined states at corrugations of gated bilayer graphene
• Orbital order in bilayer graphene at filling factor $\nu =-1$
• Ratchet effect in spatially modulated bilayer graphene: Signature of hydrodynamic transport
• Ruderman-Kittel-Kasuya-Yosida interaction in biased bilayer graphene
• Kondo effect in graphene with Rashba spin-orbit coupling
• Theoretical methods for excitonic physics in two-dimensional materials
• Persistent Current States in Bilayer Graphene
• Conductance of bilayer graphene in the presence of a magnetic field: Effects of disorder
• Direct Visualization of Native Defects in Graphite and Their Effect on the Electronic Properties of Bernal-Stacked Bilayer Graphene
• Coupling, merging, and splitting Dirac points by electron-electron interaction
• Ferrimagnetic and antiferromagnetic phase in bilayer graphene nanoflake controlled with external electric fields
• Quantum pumping in a ballistic graphene bilayer
• Electrically tunable resonant scattering in fluorinated bilayer graphene
• Graphene on graphene antidot lattices: Electronic and transport properties
• Bilayer graphene as an helical quantum Hall ferromagnet
• Analytical device model for graphene bilayer field-effect transistors using weak nonlocality approximation
• Trigonal Warping, Satellite Dirac Points and Multiple Field Tuned Topological Transitions in Twisted Double Bilayer Graphene
• Bipolar Thermoelectricity in Bilayer-Graphene--Superconductor Tunnel Junctions
• Zero and Finite Energy Dirac Points in the Energy Band Structure of Magnetic Bilayer Graphene Superlattices
• Topological Andreev Rectification
• Phase diagram of a graphene bilayer in the zero-energy Landau level
• Electric-field induced penetration of edge states at the interface between monolayer and bilayer graphene
• Validity of the two-band model of bilayer and trilayer graphene in a magnetic field
• Theory of ARPES in Graphene-Based Moiré Superlattices
• Current flow in biased bilayer graphene: the role of sublattices
• Nonlinear intensity dependence of ratchet currents induced by terahertz laser radiation in bilayer graphene with asymmetric periodic grating gates
• Transmission across a bilayer graphene region
• Impurities and electronic localization in graphene bilayers
• Quantum quench dynamics and population inversion in bilayer graphene
• Layer-resolved conductivities in multilayer graphenes
• Electrically Tunable Fine Structure of Negatively Charged Excitons in Gated Bilayer Graphene Quantum Dots
• Large-signal model of the bilayer graphene field-effect transistor targeting radio-frequency applications: theory versus experiment
• Ising quantum Hall ferromagnetism in Landau levels $\left|N\right|\ge 1$ of bilayer graphene
• Monte Carlo Study of Strongly-Interacting Degenerate Fermions: a Model for Voltage-Biased Bilayer Graphene
• Quantum transport through single and multilayer icosahedral fullerenes
• Electron-electron interactions in non-equilibrium bilayer graphene
• Signatures of electronic ordering in transport in graphene flat bands
• Strong Interaction Effects at a Fermi Surface in a Model for Voltage-Biased Bilayer Graphene
• Excitonic optical absorption in strained monolayer CrSBr
• Electric charge and potential distribution in twisted multilayer graphene
• Beyond Random Phase Approximation in electron-hole bilayer superfluidity