Gaped graphene bilayer: disorder and magnetic field effects

Abstract

Double layer graphene is a gapless semiconductor which develops a finite gap when the layers are placed at different electrostatic potentials. We study, within the tight-biding approximation, the electronic properties of the gaped graphene bilayer in the presence of disorder, perpendicular magnetic field, and transverse electric field. We show that the gap is rather stable in the presence of diagonal disorder. We compute the cyclotron effective mass in the semi-classical approximation, valid at low magnetic fields. Landau level formation is clearly seen in zigzag and armchair ribbons of the gaped bilayer at intermediate magnetic fields.

arXiv comment5 pages, 4 figures

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• Tunneling of Dirac electrons through spatial regions of finite mass
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• Disorder-induced tail states in a gapped bilayer graphene
• Transport Measurement of Landau level Gaps in Bilayer Graphene
• Gate-induced magneto-oscillation phase anomalies in graphene bilayers