Gaped graphene bilayer: disorder and magnetic field effects

Abstract

Double layer graphene is a gapless semiconductor which develops a finite gap when the layers are placed at different electrostatic potentials. We study, within the tight-biding approximation, the electronic properties of the gaped graphene bilayer in the presence of disorder, perpendicular magnetic field, and transverse electric field. We show that the gap is rather stable in the presence of diagonal disorder. We compute the cyclotron effective mass in the semi-classical approximation, valid at low magnetic fields. Landau level formation is clearly seen in zigzag and armchair ribbons of the gaped bilayer at intermediate magnetic fields.

5 pages, 4 figures

References in corpus (3)

• Electric Field Effect in Atomically Thin Carbon Films
• Unconventional quantum Hall effect and Berry's phase of 2pi in bilayer graphene
• Electronic states and Landau levels in graphene stacks

Cited by in corpus (7)

• The electronic properties of bilayer graphene
• Electronic properties of bilayer and multilayer graphene
• Tunable Excitons in Biased Bilayer Graphene
• Bound states in inhomogeneous magnetic field in graphene: a semiclassical approach
• Tunneling of Dirac electrons through spatial regions of finite mass
• Bilayer graphene: gap tunability and edge properties
• Disorder-induced tail states in a gapped bilayer graphene